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2N6660B

Temic Semiconductors

2N6660B by Temic Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: 3 ohm; Maximum Feedback Capacitance (Crss): 10 pF; Additional Features: LOW THRESHOLD;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Field Effect Transistors (FET) 2N6660B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

1.1 A

Maximum Drain-Source On Resistance:

3 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

10 pF

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6660B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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