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DMP210DUFB4-7B

Diodes Incorporated

DMP210DUFB4-7B by Diodes Incorporated

DMP210DUFB4-7B by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.2A Drain Current, and 5.5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it's a surface mount chip carrier with Ni/Pd/Au finish, operating up to 150°C.

Median Price

$0.046

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 130,000 parts In-Stock

1+ parts

$0.250

100+ parts

$0.106

1k+ parts

$0.041

10k+ parts

-

130,000

$0.250

$0.106

$0.041

-

Verical

USA . 130,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.025

130,000

-

-

-

$0.025

Future Electronics

Canada . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.027

10,000

-

-

-

$0.027

Element14

Singapore . 2,750 parts In-Stock

1+ parts

-

100+ parts

$0.129

1k+ parts

$0.050

10k+ parts

$0.050

2,750

-

$0.129

$0.050

$0.050

Farnell

UK . 2,330 parts In-Stock

1+ parts

-

100+ parts

$0.057

1k+ parts

$0.041

10k+ parts

-

2,330

-

$0.057

$0.041

-

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

8

-

-

-

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 210,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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210,500

-

-

-

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Cyclops Electronics Ltd

UK . 20,000 parts In-Stock

1+ parts

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20,000

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-

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Vyrian

USA . 7,088 parts In-Stock

1+ parts

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7,088

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Nova Conductors

Japan . 93 parts In-Stock

1+ parts

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93

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 45,691 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

-

45,691

$0.021

$0.020

$0.020

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Ampacity Inc.

Singapore . 45,548 parts In-Stock

1+ parts

$0.021

100+ parts

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45,548

$0.021

-

-

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Corohmni

South Africa . 118 parts In-Stock

1+ parts

$0.059

100+ parts

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118

$0.059

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Glotronic Ltd.

UK . 112,000 parts In-Stock

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112,000

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Perfect Parts

USA . 14,000 parts In-Stock

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14,000

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Lixinc

USA . 10,765 parts In-Stock

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10,765

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Continental Prestige Electronics

USA . 9,350 parts In-Stock

1+ parts

-

100+ parts

$0.063

1k+ parts

$0.044

10k+ parts

$0.028

9,350

-

$0.063

$0.044

$0.028

iodParts Technologies Inc.

India . 8,800 parts In-Stock

1+ parts

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100+ parts

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8,800

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Kepictronics

USA . 5,500 parts In-Stock

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5,500

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

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4,000

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Argo Parts USA

USA . 1,937 parts In-Stock

1+ parts

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1,937

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Overview

Discover the innovative DMP210DUFB4-7B by Diodes Incorporated, a top-quality P-CHANNEL small signal FET with SWITCHING application. Designed with a SINGLE configuration and built-in diode, this chip carrier package ensures reliable performance in various electronic devices. With a maximum power dissipation of 0.35 W and 20 V breakdown voltage, this enhancement mode transistor offers exceptional efficiency and durability. Elevate your projects with the superior technology and precision engineering of Diodes Incorporated's DMP210DUFB4-7B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and can protect the internal components of the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors have lower ON resistance and higher current-carrying capability compared to N-channel transistors, making them suitable for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it ideal for controlling electronic circuits.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle higher voltage levels, providing a margin of safety in different circuits.

Maximum Drain Current (Abs): 0.2 A

Capable of handling a maximum drain current of 0.2A, this transistor is suitable for low-power applications where consistent current flow is required.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can efficiently handle power and heat generated during operation, ensuring reliability and longevity.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150°C, this transistor can withstand high-temperature environments and deliver consistent performance.

Maximum Drain-Source On Resistance: 5.5 ohm

Having a low drain-source on resistance of 5.5 ohms means less power loss and improved efficiency during conduction, making this transistor a cost-effective choice.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMP210DUFB4-7B attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, LOW THRESHOLD

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.14 A

Maximum Drain-Source On Resistance:

5.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

20 pF

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMP210DUFB4-7B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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