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LSK489SOT-236LROHS

Linear Integrated Systems

LSK489SOT-236LROHS by Linear Integrated Systems

LSK489SOT-236LROHS by Linear Integrated Systems is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Featuring DEPLETION MODE operation, it has 6 terminals in GULL WING shape. With max power dissipation of 0.5W and operating temperature range from -55 to 150 °C, this JUNCTION FET offers high performance in a SMALL OUTLINE package.

Median Price

$6.090

Lifecycle Status

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1k+

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DigiKey

USA . 2,930 parts In-Stock

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$6.090

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$4.626

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$4.207

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Linear Systems

USA . 1,000 parts In-Stock

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1,000

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Nova Conductors

Japan . 750 parts In-Stock

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$5.050

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750

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Vyrian

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4,888

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Netroflash

USA . 50 parts In-Stock

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Microchip USA

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$23.774

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Overview

Unlock the power of precision with the LSK489SOT-236LROHS from Linear Integrated Systems. Crafted with superior quality and expertise, this small signal Field Effect Transistor (FET) offers unbeatable performance in amplifier applications. With a compact design and high efficiency, this N-CHANNEL transistor provides seamless integration and enhanced functionality. Experience unmatched value and reliability with Linear Integrated Systems' cutting-edge technology, setting new standards in the industry. Elevate your projects with the LSK489SOT-236LROHS and unleash the potential for innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and protects the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher mobility and conductivity, making them suitable for amplifier applications where efficiency is important.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent control and operation, enhancing the versatility of the transistor in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplifying signals.

Surface Mount: YES

Surface mount capability makes it easy to integrate the transistor onto circuit boards, saving space and simplifying the assembly process.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into various electronic devices and circuits.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical stability and easy soldering connections, ensuring reliable electrical connections.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for easy control of the transistor's conductivity, making it suitable for specific amplifier circuit designs.

Maximum Power Dissipation (Abs): 0.5 W

High power dissipation capability ensures the transistor can handle large power loads without overheating, improving overall reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space in electronic devices and circuit layouts, making it ideal for compact designs.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high-performance characteristics, making the transistor suitable for demanding amplifier applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows the transistor to operate in various environments without compromising performance.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and reliability, ensuring consistent performance in amplifier circuits.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature range allows the transistor to operate in cold environments without sacrificing performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and layout, allowing for easy integration into amplifier circuits.

Maximum Feedback Capacitance (Crss): 3 pF

Low feedback capacitance helps reduce the risk of oscillations and interference in amplifier circuits, ensuring stable operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) LSK489SOT-236LROHS attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Linear Integrated Systems

Specs

Configuration:

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

3 pF

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.5 W

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

LSK489SOT-236LROHS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Linear Integrated Systems

Linear Systems was founded in 1987 by John H. Hall. Expertise brought to Linear Systems is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by John H. Hall. ​ Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Our goal is to enable our customers to build world-class products based upon our parts. ​ Our product line consists of: Ultra-Low-Noise N-Channel and P-Channel Dual and Single JFETs, High Speed Lateral DMOS Switches, Bipolar Transistors, BIFET Amplifiers, Current Regulating Diodes, Low Leakage Diodes, MOSFETs, PhotoFETS, and Voltage Controlled Resistors. ​ Linear Integrated Systems uses patented and proprietary processes and designs to create its high performance discrete semiconductors. ​ Our primary markets are: Audio; Hybrids; Industrial Controls; Instrumentation; Medical Electronics; Military; Space; and Test & Measurement. ​ Our design and fabrication facilities are located in the heart of California’s Silicon Valley.

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