Loading...

SI4286DY-T1-GE3

Vishay Intertechnology

SI4286DY-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI4286DY-T1-GE3 is a N-channel FET with 2 elements & built-in diode. It has a max drain current of 7A, on-resistance of 0.0325 ohm, and operates in enhancement mode for switching applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly up to 260°C.

Median Price

$0.463

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 85 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

-

85

$0.463

-

-

-

Vyrian

USA . 8,712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,712

-

-

-

-

Cyclops Electronics Ltd

UK . 3,985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,985

-

-

-

-

Chip Stock

USA . 434 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

434

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,594 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

$0.453

1,594

$0.463

-

-

$0.453

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

$0.439

10k+ parts

$0.430

500

$0.463

-

$0.439

$0.430

Argo Parts USA

USA . 374 parts In-Stock

1+ parts

$0.463

100+ parts

-

1k+ parts

-

10k+ parts

$0.449

374

$0.463

-

-

$0.449

Aztec Data Supply Inc.

USA . 2,488 parts In-Stock

1+ parts

$1.460

100+ parts

-

1k+ parts

-

10k+ parts

-

2,488

$1.460

-

-

-

Corohmni

South Africa . 43 parts In-Stock

1+ parts

$1.518

100+ parts

-

1k+ parts

-

10k+ parts

-

43

$1.518

-

-

-

Advanced Electronics

New Zealand . 300 parts In-Stock

1+ parts

$2.097

100+ parts

$1.908

1k+ parts

$1.720

10k+ parts

-

300

$2.097

$1.908

$1.720

-

AZTECH Wire

Italy . 323 parts In-Stock

1+ parts

$11.248

100+ parts

-

1k+ parts

-

10k+ parts

-

323

$11.248

-

-

-

Ampacity Inc.

Singapore . 410 parts In-Stock

1+ parts

$25.050

100+ parts

-

1k+ parts

-

10k+ parts

-

410

$25.050

-

-

-

Kepictronics

USA . 306,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

306,000

-

-

-

-

RC Electronics

USA . 94,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

94,316

-

-

-

-

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

Perfect Parts

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

28,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 6,524 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,524

-

-

-

-

Authorized Procurement Solutions

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the Vishay Intertechnology SI4286DY-T1-GE3 Small Signal Field Effect Transistor. Crafted with precision and expertise, this N-CHANNEL transistor offers seamless switching capabilities for a wide range of applications. With its high-quality construction and advanced features like built-in diodes and enhancement mode operation, this transistor delivers unparalleled performance and reliability. Elevate your projects to new heights with the value and benefits that only Vishay Intertechnology can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to damage, ensuring the longevity of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors are typically more efficient and have lower ON resistance compared to P-Channel transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with built-in diode provides more versatility and functionality in various circuit applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient switching performance.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and effort in manufacturing.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this transistor can handle higher voltages and voltages spikes, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 7 A

The high maximum drain current capability of 7A allows for handling more current, making it suitable for applications with higher power requirements.

Maximum Power Dissipation (Abs): 2.9 W

The high power dissipation capability of 2.9W ensures the transistor can handle heat efficiently, minimizing the risk of overheating.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can operate reliably in a wide range of temperature conditions.

Maximum Drain-Source On Resistance: 0.0325 ohm

The low on resistance of 0.0325 ohm minimizes power loss and heat generation, leading to efficient performance in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4286DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.0325 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4286DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7