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SI4288DY-T1-GE3

Vishay Intertechnology

SI4288DY-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI4288DY-T1-GE3 is a N-channel FET with 40V DS breakdown voltage, ideal for switching applications. Featuring separate elements with built-in diode, it has 2 elements and 8 terminals in a small outline package. With max drain current of 9.2A and 0.02 ohm on-resistance, it operates b/w -55 to 150°C efficiently.

Median Price

$0.555

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,973 parts In-Stock

1+ parts

$2.070

100+ parts

$0.887

1k+ parts

$0.644

10k+ parts

-

6,973

$2.070

$0.887

$0.644

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Mouser Electronics

USA . 250 parts In-Stock

1+ parts

$2.080

100+ parts

$0.888

1k+ parts

$0.645

10k+ parts

$0.603

250

$2.080

$0.888

$0.645

$0.603

TTI Europe

Germany . 277,500 parts In-Stock

1+ parts

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$0.491

277,500

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$0.491

Element14

Singapore . 24,237 parts In-Stock

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$0.940

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$0.645

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24,237

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$0.940

$0.645

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Farnell

UK . 20,000 parts In-Stock

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$0.450

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$0.450

Arrow

USA . 17,500 parts In-Stock

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$0.520

17,500

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$0.520

Verical

USA . 17,500 parts In-Stock

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$0.520

17,500

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$0.520

Chip1Stop

Japan . 10,000 parts In-Stock

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$0.555

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$0.555

Newark

USA . 5,000 parts In-Stock

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$0.632

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$0.632

Distributors (In-Stock)

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Nova Conductors

Japan . 88 parts In-Stock

1+ parts

$0.656

100+ parts

-

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88

$0.656

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Maritex

Poland . 45,000 parts In-Stock

1+ parts

$0.774

100+ parts

$0.677

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45,000

$0.774

$0.677

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TME

Poland . 4,160 parts In-Stock

1+ parts

$0.870

100+ parts

$0.760

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4,160

$0.870

$0.760

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Vyrian

USA . 35,673 parts In-Stock

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Chip Stock

USA . 32,380 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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$1.613

10,000

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$1.613

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

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$0.815

5,000

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$0.815

Rutronik

Germany . 5,000 parts In-Stock

1+ parts

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$0.632

5,000

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$0.632

Univa Technologies Pte. Ltd

Singapore . 4,737 parts In-Stock

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4,737

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ComSIT Distribution GmbH

Germany . 1,844 parts In-Stock

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Bristol Electronics

USA . 82 parts In-Stock

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82

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Elcom Components

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Component Stockers USA

USA . 47,096 parts In-Stock

1+ parts

$1.300

100+ parts

$0.590

1k+ parts

$0.530

10k+ parts

$0.490

47,096

$1.300

$0.590

$0.530

$0.490

Corohmni

South Africa . 19 parts In-Stock

1+ parts

$1.333

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19

$1.333

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Continental Prestige Electronics

USA . 26,852 parts In-Stock

1+ parts

$1.370

100+ parts

$0.839

1k+ parts

$0.547

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26,852

$1.370

$0.839

$0.547

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Microchip USA

USA . 9,934 parts In-Stock

1+ parts

$3.822

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9,934

$3.822

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RC Electronics

USA . 99,542 parts In-Stock

1+ parts

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$0.840

1k+ parts

$0.770

10k+ parts

$0.740

99,542

-

$0.840

$0.770

$0.740

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 16,778 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,066 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Univa Technologies Pte. Ltd (Excess)

Singapore . 4,737 parts In-Stock

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4,737

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Formix International (Excess)

India . 4,520 parts In-Stock

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4,520

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A-Z Elektronik GmbH

Germany . 2,468 parts In-Stock

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2,468

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Overview

Unlock the power of cutting-edge technology with the SI4288DY-T1-GE3 by Vishay Intertechnology, a top-tier manufacturer known for quality and reliability. This small signal field effect transistor is a game-changer in the switching applications category, offering seamless operation and enhanced performance. With a robust construction and advanced features like separate elements with built-in diode, this transistor ensures maximum efficiency and durability. Experience the difference that Vishay Intertechnology brings to your projects with the SI4288DY-T1-GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, ideal for applications where weight is a concern.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL configuration allows for efficient switching and high performance in electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with a built-in diode offers versatility in circuit design and can save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in high-frequency circuits.

Surface Mount: YES

Surface mount capability allows for easy and quick assembly onto PCBs, saving time and effort during manufacturing.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40 V, this FET can handle higher voltages and ensure reliability in demanding applications.

Maximum Power Dissipation (Abs): 3.1 W

With a high power dissipation capability, this FET can handle high power loads without overheating, ensuring long-term reliability.

Maximum Operating Temperature: 150 °C

Capable of operating at temperatures up to 150°C, making it suitable for a wide range of environmental conditions.

Maximum Drain Current (ID): 9.2 A

High maximum drain current allows for robust performance in high-power applications, making it a versatile choice for various circuit designs.

Maximum Drain-Source On Resistance: 0.02 ohm

Low drain-source on resistance ensures efficient power transfer, reducing heat dissipation and improving overall performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4288DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

9.2 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4288DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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