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SI4204DY-T1-GE3

Vishay Intertechnology

SI4204DY-T1-GE3 by Vishay Intertechnology

SI4204DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 2 elements and built-in diode for switching applications. It has a max drain current of 19.8A, on-resistance of 0.0046 ohm, and operates in enhancement mode. With a package style of small outline and peak reflow temp of 260°C, it's ideal for high-power surface mount designs.

Median Price

$1.749

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 10,685 parts In-Stock

1+ parts

$1.749

100+ parts

$1.161

1k+ parts

$1.005

10k+ parts

$0.982

10,685

$1.749

$1.161

$1.005

$0.982

Newark

USA . 2,150 parts In-Stock

1+ parts

$1.940

100+ parts

$1.390

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-

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2,150

$1.940

$1.390

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Farnell

UK . 10,685 parts In-Stock

1+ parts

$1.984

100+ parts

$1.137

1k+ parts

$0.984

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-

10,685

$1.984

$1.137

$0.984

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DigiKey

USA . 6,704 parts In-Stock

1+ parts

$2.620

100+ parts

$1.160

1k+ parts

$0.933

10k+ parts

$0.762

6,704

$2.620

$1.160

$0.933

$0.762

Mouser Electronics

USA . 12,535 parts In-Stock

1+ parts

$2.800

100+ parts

$1.240

1k+ parts

$0.934

10k+ parts

$0.885

12,535

$2.800

$1.240

$0.934

$0.885

TTI

USA . 22,500 parts In-Stock

1+ parts

-

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$0.990

22,500

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$0.990

Arrow

USA . 2,500 parts In-Stock

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$0.795

2,500

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$0.795

Verical

USA . 2,500 parts In-Stock

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$1.076

2,500

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$1.076

Chip1Stop

Japan . 2,500 parts In-Stock

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$0.843

2,500

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$0.843

Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$1.283

100+ parts

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450

$1.283

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Vyrian

USA . 8,167 parts In-Stock

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NAC Semi

USA . 2,500 parts In-Stock

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$1.280

2,500

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$1.280

ComSIT Distribution GmbH

Germany . 1,875 parts In-Stock

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1,875

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 240 parts In-Stock

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240

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A2Z Electronics, Inc.

USA . 100 parts In-Stock

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100

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Bristol Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 8,288 parts In-Stock

1+ parts

$0.630

100+ parts

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8,288

$0.630

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Semicontronic

India . 7,698 parts In-Stock

1+ parts

$0.650

100+ parts

$0.634

1k+ parts

$0.630

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7,698

$0.650

$0.634

$0.630

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Aztec Data Supply Inc.

USA . 260 parts In-Stock

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$0.752

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260

$0.752

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Corohmni

South Africa . 905 parts In-Stock

1+ parts

$1.007

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905

$1.007

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$1.159

100+ parts

$1.055

1k+ parts

$0.950

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750

$1.159

$1.055

$0.950

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Argo Parts USA

USA . 4,435 parts In-Stock

1+ parts

$1.205

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4,435

$1.205

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Continental Prestige Electronics

USA . 2,447 parts In-Stock

1+ parts

$1.790

100+ parts

$1.140

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$0.768

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2,447

$1.790

$1.140

$0.768

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Microchip USA

USA . 9,098 parts In-Stock

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$5.620

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Perfect Parts

USA . 20,657 parts In-Stock

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Kepictronics

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 2,370 parts In-Stock

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Infinite Electronics LLP (Excess)

. 485 parts In-Stock

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485

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ChipstoGo Electronic ltd

UK . 157 parts In-Stock

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157

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Formix International (Excess)

India . 2 parts In-Stock

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Overview

Enhance your electronic devices with the high-quality SI4204DY-T1-GE3 Small Signal Field Effect Transistor by Vishay Intertechnology. Designed for switching applications, this N-channel transistor offers a seamless performance in a compact size. With a maximum drain current of 19.8A and a minimum DS breakdown voltage of 20V, this transistor is perfect for enhancing the efficiency of your projects. Trust Vishay Intertechnology for reliable components that deliver outstanding results every time. Upgrade your electronics with the SI4204DY-T1-GE3 and experience the difference in performance and quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operation and control of current flow.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Offers versatility and functionality for different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Facilitates easy mounting on circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 20 V

Provides a suitable voltage range for operation in various electronic systems.

Maximum Drain Current (Abs) (ID): 19.8 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 3.25 W

Efficiently dissipates heat to prevent overheating during operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for improved performance and efficiency.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, increasing versatility.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4204DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

19.8 A

Maximum Drain Current (ID):

19.8 A

Maximum Drain-Source On Resistance:

.0046 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4204DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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