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MMBV109LT1G

Onsemi

MMBV109LT1G by Onsemi

MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.

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North Shore Components

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AZTECH Wire

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Problanco Electronics

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Benley Electronics

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Kulean Microsystems

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TANS Electronics

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Overview

Elevate your electronic designs with the MMBV109LT1G Varactor Diode by Onsemi. Crafted with precision and expertise, this hyperabrupt diode offers a minimum quality factor of 200 for exceptional performance in very high-frequency applications. With a small outline package style and dual terminals, this diode is perfect for surface mount designs. Experience the benefits of its variable capacitance and high breakdown voltage of 30 V, providing reliable and efficient operation. Trust in Onsemi's reputation for quality and innovation, and take your projects to new heights with the MMBV109LT1G.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor indicates good performance and reliability of the varactor diode in various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection to the internal components of the varactor diode.

Config: SINGLE

Single configuration simplifies the design and integration of the varactor diode into electronic circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification ensures fast and precise changes in capacitance, making the varactor diode suitable for high-frequency applications.

Frequency Band: VERY HIGH FREQUENCY

The very high-frequency band capability of the varactor diode enables it to operate efficiently in high-frequency electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation of the varactor diode on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of handling and installation in electronic circuits.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the varactor diode in different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in compact circuit designs and makes the varactor diode suitable for space-constrained applications.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and solderability for reliable electrical connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in mounting and soldering the varactor diode in various orientations.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, the varactor diode can handle power efficiently without overheating.

Nominal Diode Capacitance: 29 pF

The nominal diode capacitance value of 29 pF indicates the range of capacitance the varactor diode can provide, making it suitable for specific applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against voltage spikes and overloads, enhancing the reliability of the varactor diode.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds indicates the thermal stability and reliability of the varactor diode during soldering processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C ensures proper soldering of the varactor diode on the PCB.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers tunable capacitance for versatile applications in RF and microwave circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and mounting of the varactor diode on the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V ensures protection against reverse voltage surges, improving the reliability of the varactor diode.

Diode Cap Tolerance: 10.34 %

The diode capacitance tolerance of 10.34% ensures accurate and consistent performance of the varactor diode across different operating conditions.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high quality and reliability of the varactor diode in electronic circuits.

Minimum Diode Capacitance Ratio: 5

The minimum diode capacitance ratio of 5 indicates the range of capacitance variation achievable with the varactor diode, making it suitable for frequency tuning and voltage-controlled applications.

Technical Specifications

Varactor Diodes MMBV109LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV109LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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