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MDX640

Texas Instruments

MDX640 by Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .9 pF; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 33;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,544 parts In-Stock

1+ parts

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7,544

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Digiode

USA . 2,916 parts In-Stock

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2,916

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 664 parts In-Stock

1+ parts

$0.010

100+ parts

-

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664

$0.010

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Parana Technologies

USA . 225 parts In-Stock

1+ parts

$0.176

100+ parts

-

1k+ parts

$1.513

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225

$0.176

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$1.513

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DigiPath Technology Company

USA . 1,468 parts In-Stock

1+ parts

$0.194

100+ parts

$0.179

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1,468

$0.194

$0.179

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ChromeModa Solutions

Germany . 4,113 parts In-Stock

1+ parts

$0.198

100+ parts

$0.162

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4,113

$0.198

$0.162

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IDEA Electronic Components Group

UK . 954 parts In-Stock

1+ parts

$0.198

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$0.178

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954

$0.198

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$0.178

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Semicontronic

India . 631 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

1k+ parts

$0.980

10k+ parts

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631

$1.010

$0.985

$0.980

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Ampacity Inc.

Singapore . 1,368 parts In-Stock

1+ parts

$2.010

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1,368

$2.010

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AZTECH Wire

Italy . 687 parts In-Stock

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$17.846

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687

$17.846

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Corphita

USA . 1,204 parts In-Stock

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1,204

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Corohmni

South Africa . 445 parts In-Stock

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445

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Technical Specifications

Varactor Diodes MDX640 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Nominal Diode Capacitance:

.9 pF

Minimum Quality Factor:

33

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Varactors

Surface Mount:

YES

Trade Compliance

MDX640 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

6625-01-433-6786, 6625014336786

NIIN

014336786

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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