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1N5689

Onsemi

1N5689 by Onsemi

1N5689 by Onsemi is a varactor diode with 33pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for frequency tuning due to its high quality factor and low reverse current of 0.00000002uA.

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TANS Electronics

Latvia . 2,807 parts In-Stock

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Northwest PG Solutions

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Problanco Electronics

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SupplyDigital Components

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Overview

Experience superior performance and quality with the Onsemi 1N5689 Varactor Diode. Manufactured by Onsemi, a trusted name in the industry, this diode offers unmatched precision and reliability. Perfect for various applications, this diode provides a wide range of benefits to our customers. Enhance your projects with the exceptional value and advantages that the 1N5689 Varactor Diode brings to the table. Trust Onsemi for all your diode needs.

Feature Benefit Bullets

Minimum Quality Factor: 500

High quality factor ensures stability and low signal loss, making this varactor diode reliable for high-frequency applications.

Package Body Material: GLASS

Glass provides good insulation and protection for the diode, ensuring durability and safety in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes have a sharp change in capacitance with voltage, allowing for precise control and modulation in RF circuits.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves efficiency in the circuit.

Package Shape: ROUND

Round shape facilitates easy mounting and soldering of the diode onto PCBs or other electronic components.

Reverse Test Voltage: 40 V

With a high reverse test voltage, this varactor diode can withstand reverse voltage without breakdown, ensuring reliable performance.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and installation process, reducing complexity in circuit design.

Package Style (Meter): LONG FORM

Long form package style provides better heat dissipation and mechanical stability, enhancing the overall performance and longevity of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments, providing flexibility and reliability in demanding conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function in cold environments without performance degradation.

Terminal Finish: TIN LEAD

Tin lead finish on terminals ensures good conductivity and solderability, enhancing the overall reliability and connection of the diode.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting and connection process, making it compatible with standard PCB layouts and designs.

Case Connection: ISOLATED

Isolated case connection prevents interference and leakage, improving the overall performance and safety of the diode in the circuit.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation allows the diode to handle high power levels without overheating or damage, ensuring long-term reliability and performance.

Nominal Diode Capacitance: 33 pF

The nominal capacitance value of 33 pF provides optimal performance and versatility in various RF applications, offering flexibility and control.

Minimum Breakdown Voltage: 45 V

High minimum breakdown voltage ensures the diode can withstand voltage spikes or surges, improving the reliability and longevity of the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers adjustable capacitance for tuning and modulation, making it suitable for frequency control and signal processing applications.

Terminal Form: WIRE

Wire terminal form provides easy connection and installation, offering flexibility and compatibility with various circuit configurations.

Maximum Repetitive Peak Reverse Voltage: 40 V

High maximum repetitive peak reverse voltage ensures the diode can handle reverse voltage spikes effectively, enhancing its reliability in the circuit.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for variations in capacitance values, providing flexibility in circuit design and compensation for manufacturing tolerances.

Diode Element Material: SILICON

Silicon material offers high reliability and performance, making the diode suitable for various applications where stability and durability are required.

Minimum Diode Capacitance Ratio: 3.3

Minimum capacitance ratio of 3.3 provides a wide range of capacitance values for tuning and modulation, offering versatility and control in RF circuits.

Technical Specifications

Varactor Diodes 1N5689 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

500

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5689 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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