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1N5692

Onsemi

1N5692 by Onsemi

1N5692 by Onsemi is a Varactor Diode with 56pF capacitance, 45V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Digiode

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Vyrian

USA . 777 parts In-Stock

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Native Components

USA . 482 parts In-Stock

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Northwest PG Solutions

USA . 169 parts In-Stock

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Problanco Electronics

Mexico . 6,471 parts In-Stock

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TANS Electronics

Latvia . 5,226 parts In-Stock

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SupplyDigital Components

Austria . 3,327 parts In-Stock

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Kulean Microsystems

USA . 1,884 parts In-Stock

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Corphita

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Corohmni

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UHIMA Technologies

Türkiye . 97 parts In-Stock

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Overview

Enhance your electronic designs with the 1N5692 Varactor Diode by Onsemi. Known for their top-quality components, Onsemi delivers a reliable product that offers superior performance in a variety of applications. With a minimum quality factor of 300 and a maximum reverse current of 0.00000002 uA, this diode is a must-have for any project requiring variable capacitance. Whether you're working on telecommunications, radar systems, or frequency tuning applications, the 1N5692 provides excellent value, benefits, and advantages to meet your needs. Upgrade your designs today with Onsemi's trusted Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 300

A high minimum quality factor of 300 ensures that the varactor diode provides stable and reliable performance in various applications.

Package Body Material: GLASS

The use of glass as the package body material provides good insulation and protection for the diode, ensuring durability and longevity.

Config: SINGLE

The single configuration simplifies the circuit design and integration of the varactor diode, making it easy to use in different electronic systems.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification ensures fast response times and accurate signal control, making this varactor diode suitable for high-frequency applications.

Maximum Reverse Current: 0.00000002 uA

The low maximum reverse current minimizes power consumption and enhances the efficiency of the varactor diode in various electronic circuits.

Package Shape: ROUND

The round package shape offers easy mounting and installation options, allowing for versatile use in different electronic devices.

Reverse Test Voltage: 40 V

The high reverse test voltage of 40 V ensures the varactor diode can withstand reverse polarity and voltage spike situations, improving overall reliability.

No. of Terminals: 2

Having only two terminals simplifies the connection process and makes it easier to integrate the varactor diode into various circuit designs.

Package Style (Meter): LONG FORM

The long form package style provides ample space for internal components and facilitates heat dissipation, ensuring optimal performance and longevity.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this varactor diode can withstand elevated temperatures without compromising performance, making it suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C ensures the varactor diode remains functional in cold environments, increasing its versatility and reliability.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity, making it easy to connect the varactor diode in different circuit configurations.

Terminal Position: AXIAL

The axial terminal position simplifies the mounting and connection process, allowing for easy integration of the varactor diode into various electronic systems.

Case Connection: ISOLATED

The isolated case connection ensures proper insulation and prevents electrical interference, enhancing the overall performance and reliability of the varactor diode.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, this varactor diode can handle high power levels without overheating, making it ideal for demanding applications.

Nominal Diode Capacitance: 56 pF

The nominal diode capacitance of 56 pF provides accurate signal control and modulation capabilities, making this varactor diode suitable for various frequency tuning applications.

Minimum Breakdown Voltage: 45 V

The high minimum breakdown voltage of 45 V ensures the varactor diode can handle high voltages without failing, enhancing its reliability and durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers tunable capacitance levels and precise control over signal modulation, making it versatile and suitable for various applications.

Terminal Form: WIRE

The wire terminal form provides flexibility in connection options and makes it easy to integrate the varactor diode into different circuit layouts.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a maximum repetitive peak reverse voltage of 40 V, this varactor diode can handle reverse voltages without damage, ensuring long-term reliability in diverse electronic systems.

Diode Cap Tolerance: 20 %

The 20% diode capacitance tolerance allows for fine-tuning of capacitance levels, providing precise control over signal modulation and frequency tuning in various applications.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good conductivity and temperature stability, ensuring reliable performance in different operating conditions.

Minimum Diode Capacitance Ratio: 3.3

The minimum diode capacitance ratio of 3.3 offers a wide range of tunable capacitance levels, allowing for flexible signal modulation and frequency tuning options in various electronic circuits.

Technical Specifications

Varactor Diodes 1N5692 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

56 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5692 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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