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MV1403

Onsemi

MV1403 by Onsemi

MV1403 by Onsemi is a single varactor diode with hyperabrupt capacitance classification. It features a min quality factor of 200, nominal capacitance of 175 pF, and min breakdown voltage of 12 V. Ideal for applications requiring precise tuning in RF circuits or frequency modulators.

Median Price

$4.850

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,106 parts In-Stock

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-

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$3.880

1k+ parts

$3.470

10k+ parts

$3.260

2,106

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$3.880

$3.470

$3.260

DigiKey

USA . 2,106 parts In-Stock

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$5.100

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$5.100

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Verical

USA . 2,106 parts In-Stock

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$4.850

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$4.338

10k+ parts

$4.075

2,106

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$4.850

$4.338

$4.075

Distributors (In-Stock)

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Digiode

USA . 806 parts In-Stock

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$4.085

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806

$4.085

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Vyrian

USA . 190 parts In-Stock

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$4.300

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$4.300

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DF Sales Co.

USA . 23 parts In-Stock

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$19.300

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$19.300

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DF Sales Co.

USA . 23 parts In-Stock

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$19.300

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$19.300

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Manotoh

Italy . 85 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 44 parts In-Stock

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Electronics Depot

USA . 35 parts In-Stock

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Sunrise Surplus Inc.

USA . 20 parts In-Stock

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Euro-Tech

UK . 16 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 10 parts In-Stock

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Inventory MP

USA . 8 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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R&J Components

USA . 1 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,476 parts In-Stock

1+ parts

$3.870

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1,476

$3.870

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Corohmni

South Africa . 285 parts In-Stock

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$4.300

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285

$4.300

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Microchip USA

USA . 8,181 parts In-Stock

1+ parts

$26.850

100+ parts

$26.680

1k+ parts

$26.600

10k+ parts

$26.510

8,181

$26.850

$26.680

$26.600

$26.510

QUARKTWIN TECHNOLOGY LTD

USA . 28,497 parts In-Stock

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SupplyDigital Components

Austria . 8,033 parts In-Stock

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TANS Electronics

Latvia . 7,286 parts In-Stock

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Kepictronics

USA . 3,681 parts In-Stock

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3,681

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Kulean Microsystems

USA . 3,325 parts In-Stock

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Continental Prestige Electronics

USA . 2,839 parts In-Stock

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Problanco Electronics

Mexico . 783 parts In-Stock

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UHIMA Technologies

Türkiye . 374 parts In-Stock

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Assy Fe

Spain . 31 parts In-Stock

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Eliminating Global Boundries, Inc

USA . 6 parts In-Stock

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Overview

Unlock endless possibilities with the MV1403 Varactor Diode by Onsemi. Crafted with top-tier quality and precision engineering, this diode offers superior performance and reliability. Ideal for a wide range of applications, from wireless communication systems to radar detectors, this diode provides unmatched value and benefits. Experience seamless integration and enhanced functionality with the MV1403, setting new standards in the industry. Elevate your projects with Onsemi's cutting-edge technology and unleash the full potential of your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance in terms of signal handling and stability, making this varactor diode a reliable choice for applications requiring high quality factor.

Package Body Material: GLASS

Glass package body material provides better thermal and electrical insulation, ensuring high reliability and performance of the varactor diode.

Config: SINGLE

Single configuration simplifies the design and installation process, making this varactor diode easy to use and integrate into circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification indicates that this varactor diode offers precise and rapid changes in capacitance, making it suitable for applications requiring fast and accurate tuning.

Package Shape: ROUND

Round package shape offers better thermal dissipation and mechanical strength, ensuring reliable performance in various environmental conditions.

No. of Terminals: 2

Two terminals simplify the circuit connection process and make this varactor diode suitable for applications with limited space constraints.

Package Style (Meter): LONG FORM

Long form package style provides a larger surface area for better heat dissipation, ensuring consistent performance of the varactor diode under high power conditions.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting process and ensures proper alignment, making this varactor diode easy to install and use in various applications.

Case Connection: ISOLATED

Isolated case connection minimizes interference and ensures proper functioning of the varactor diode, making it suitable for applications requiring high signal integrity.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability allows this varactor diode to handle high power levels without overheating, ensuring reliable performance in demanding applications.

Nominal Diode Capacitance: 175 pF

Nominal capacitance of 175 pF offers a wide range of tuning capabilities, making this varactor diode versatile and suitable for various frequency range applications.

Minimum Breakdown Voltage: 12 V

Minimum breakdown voltage of 12 V ensures protection against voltage surges and spikes, making this varactor diode reliable and durable in high voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for precise tuning and adjustment of capacitance, making this varactor diode suitable for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form offers flexible connection options and ease of soldering, making this varactor diode convenient to use in various circuit designs.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides a stable and reliable capacitance range, ensuring accurate tuning and performance consistency in the varactor diode.

Diode Element Material: SILICON

Silicon diode element material offers high thermal stability and low leakage current, ensuring reliable performance and long-term durability of the varactor diode.

Minimum Diode Capacitance Ratio: 10

Minimum capacitance ratio of 10 indicates a wide tuning range, making this varactor diode suitable for applications requiring precise and versatile tuning capabilities.

Technical Specifications

Varactor Diodes MV1403 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

12 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

10

Nominal Diode Capacitance:

175 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MV1403 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-116-8951, 5961001168951, 5961-99-790-6539, 5961997906539

NIIN

001168951, 997906539

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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