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MV1638

Onsemi

MV1638 by Onsemi

MV1638 by Onsemi is a single varactor diode with 33pF capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

$25.420

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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R&J Components

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ECAB

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Digiode

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LWI Electronics Inc

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Vyrian

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Pride Electronics

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Corohmni

South Africa . 152 parts In-Stock

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Kulean Microsystems

USA . 5,883 parts In-Stock

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TANS Electronics

Latvia . 2,187 parts In-Stock

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Problanco Electronics

Mexico . 1,432 parts In-Stock

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SupplyDigital Components

Austria . 619 parts In-Stock

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UHIMA Technologies

Türkiye . 420 parts In-Stock

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Corphita

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Overview

Unlock the potential of your electronic designs with the MV1638 Varactor Diode by Onsemi. Crafted with precision and expertise, this high-quality diode offers unparalleled performance and reliability. Ideal for a wide range of applications, the MV1638 promises superior functionality and efficiency. Experience the value and benefits of Onsemi's innovative technology, providing you with a competitive edge in the market. Elevate your projects with the MV1638 Varactor Diode and unleash endless possibilities.

Feature Benefit Bullets

Package Body Material: GLASS

Glass package offers better protection and durability for the varactor diode, ensuring long-term reliability.

Nominal Diode Capacitance: 33 pF

This capacitance value allows for versatile use in various applications, providing flexibility in circuit design.

Minimum Breakdown Voltage: 20 V

Higher breakdown voltage ensures protection against voltage spikes and overloads, increasing the diode's lifespan.

Diode Cap Tolerance: 10 %

The low capacitance tolerance ensures consistent performance and accurate circuit operation.

Minimum Diode Capacitance Ratio: 2

The high capacitance ratio provides for a wide range of capacitance values, enabling precise tuning in RF applications.

Technical Specifications

Varactor Diodes MV1638 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV1638 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-460-5692, 5961004605692

NIIN

004605692

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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