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1N5465

Onsemi

1N5465 by Onsemi

1N5465 by Onsemi is a varactor diode with a min quality factor of 550 and max reverse current of 0.02 uA. It is used in applications requiring variable capacitance diodes, such as RF tuning circuits due to its abrupt variable capacitance classification. With a nominal capacitance of 15 pF and breakdown voltage of 30 V, it operates b/w -65 to 175 °C for various electronic designs.

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Corphita

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SupplyDigital Components

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Problanco Electronics

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Overview

Discover the innovative 1N5465 Varactor Diode by Onsemi, a high-quality product designed to deliver exceptional performance and reliability. Manufactured by Onsemi, known for their cutting-edge technology and superior products, this diode is perfect for applications requiring variable capacitance control. With a wide range of operating temperatures and low reverse current, this diode offers unmatched value and benefits to customers. Whether you're looking for precise tuning in RF circuits or frequency modulation in communication systems, the 1N5465 Varactor Diode is the ideal choice for your next project. Unlock new possibilities with Onsemi's top-of-the-line technology.

Feature Benefit Bullets

Minimum Quality Factor: 550

A high minimum quality factor ensures efficient performance and reliable operation of the varactor diode.

Package Body Material: GLASS

Glass packaging provides excellent protection for the diode, ensuring durability and stability in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in electronic applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes offer precise control over capacitance changes, suitable for tuning applications.

Maximum Reverse Current: 0.02 uA

Low maximum reverse current minimizes power loss and ensures efficiency in electronic circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and placement in various circuit designs.

Reverse Test Voltage: 25 V

Suitable reverse test voltage rating ensures safe and reliable operation of the varactor diode.

No. of Terminals: 2

Having 2 terminals simplifies the connection and integration of the varactor diode in circuits.

Package Style (Meter): LONG FORM

Long form package style offers versatility and compatibility in different electronic applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the varactor diode to function effectively in a wide range of environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can operate in extreme cold conditions without issues.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for reliable connections in circuits.

Terminal Position: AXIAL

Axial terminal position simplifies the installation and connection of the varactor diode in electronic circuits.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures stable performance of the varactor diode.

Maximum Power Dissipation: 0.4 W

The high maximum power dissipation rating allows the varactor diode to handle power efficiently without overheating.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF provides the desired capacitance range for various tuning and frequency applications.

Minimum Breakdown Voltage: 30 V

A high minimum breakdown voltage ensures the varactor diode can withstand voltage spikes and surges in circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for precise tuning of capacitance in electronic circuits for optimal performance.

Terminal Form: WIRE

Wire terminal form offers flexibility in connection and installation of the varactor diode in circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures the diode can handle reverse voltage without breakdown.

Diode Cap Tolerance: 20 %

A 20% capacitance tolerance provides consistency in capacitance values, making the diode suitable for precise tuning applications.

Diode Element Material: SILICON

Silicon diode element material offers good performance and reliability in various electronic applications.

Minimum Diode Capacitance Ratio: 2.8

A minimum capacitance ratio of 2.8 allows for a wide range of capacitance values, making the diode versatile in tuning applications.

Technical Specifications

Varactor Diodes 1N5465 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

550

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5465 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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