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1SV285

Toshiba

1SV285 by Toshiba

Toshiba's 1SV285 Varactor Diode is a single-config, ultra-high frequency diode with a capacitance ratio of 2 and nominal capacitance of 4.45 pF. Ideal for applications requiring variable capacitance, such as in RF tuning circuits for small outline packages operating up to 125°C.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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NexGen Digital

USA . 120,000 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 8,000 parts In-Stock

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Netsource Technology, Inc.

USA . 6,465 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,210 parts In-Stock

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VNN

France . 300 parts In-Stock

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300

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 640 parts In-Stock

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$3.010

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640

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Kepictronics

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Authorized Procurement Solutions

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Assy Fe

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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Overview

Unlock the potential of your electronic projects with the Toshiba 1SV285 Varactor Diode. Crafted by a trusted manufacturer known for quality, this diode offers ultra-high frequency performance and precise variable capacitance. Perfect for applications requiring accurate tuning, this compact diode delivers exceptional value and reliability. Enhance your designs with the 1SV285 and experience unparalleled performance that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring its durability and longevity.

Frequency Band: ULTRA HIGH FREQUENCY

Ideal for high-frequency applications, ensuring efficient performance in demanding electronic systems.

Surface Mount: YES

Convenient for automated assembly processes and compact PCB design.

Maximum Reverse Current: 0.003 uA

Low reverse current ensures minimal power loss and improved efficiency.

Nominal Diode Capacitance: 4.45 pF

Precise capacitance value for stable performance in tuning and frequency control applications.

Diode Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance in diode applications.

Technical Specifications

Varactor Diodes 1SV285 attributes and parameters. Explore more Varactor Diodes devices from Toshiba

Specs

Minimum Breakdown Voltage:

10 V

Config:

SINGLE

Diode Cap Tolerance:

10.11 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

4.45 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Maximum Reverse Current:

.003 uA

Reverse Test Voltage:

10 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

1SV285 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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