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MV104RL1

Onsemi

MV104RL1 by Onsemi

MV104RL1 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 39.5 pF nominal capacitance. It operates at up to 125 °C and has a min breakdown voltage of 32V. Ideal for applications requiring variable capacitance diodes in cylindrical packages.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,359 parts In-Stock

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Digiode

USA . 873 parts In-Stock

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TANS Electronics

Latvia . 6,238 parts In-Stock

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Problanco Electronics

Mexico . 5,409 parts In-Stock

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SupplyDigital Components

Austria . 3,442 parts In-Stock

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Kulean Microsystems

USA . 2,688 parts In-Stock

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Corohmni

South Africa . 444 parts In-Stock

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Corphita

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Overview

Unleash the power of cutting-edge technology with Onsemi's MV104RL1 Varactor Diodes. With a minimum quality factor of 100 and a maximum operating temperature of 125 °C, these diodes offer unmatched performance and reliability. Ideal for applications requiring variable capacitance, the MV104RL1 guarantees precision and efficiency. Whether you're looking to enhance RF amplifiers or improve frequency tuning in communication systems, this product is your ultimate solution. Trust Onsemi's expertise and elevate your projects with the MV104RL1 Varactor Diodes today!

Feature Benefit Bullets

Minimum Quality Factor: 100

A high minimum quality factor indicates that this varactor diode has good frequency stability and low signal loss, making it a reliable choice for frequency tuning applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for easy integration into circuits and provides flexibility in circuit design for optimal performance.

Package Shape: ROUND

The round package shape offers compactness and easy mounting options, making the varactor diode suitable for space-constrained applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, making it easier to solder the diode onto circuit boards for secure connections.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation capability of 0.28 W ensures that the varactor diode can handle power fluctuations without overheating, maintaining stable performance.

Nominal Diode Capacitance: 39.5 pF

The nominal capacitance value of 39.5 pF indicates the range of capacitance that this varactor diode can provide, allowing for precise tuning and frequency control in electronic circuits.

Minimum Breakdown Voltage: 32 V

The high minimum breakdown voltage of 32 V indicates the level of voltage that this varactor diode can withstand before breakdown, ensuring protection against overvoltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product allows for adjustable capacitance levels, enabling precise tuning and modulation in RF circuits and signal processing applications.

Technical Specifications

Varactor Diodes MV104RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

32 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

6.33 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

39.5 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

100

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV104RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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