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MV104RLRE

Onsemi

MV104RLRE by Onsemi

MV104RLRE by Onsemi is a Varactor Diode with 39.5pF capacitance, 32V breakdown voltage, and 100 min quality factor. Commonly used in RF applications for frequency tuning due to its variable capacitance diode type and high-quality performance at temperatures up to 125 °C.

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1k+

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Vyrian

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TANS Electronics

Latvia . 5,044 parts In-Stock

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Problanco Electronics

Mexico . 2,417 parts In-Stock

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SupplyDigital Components

Austria . 1,162 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 497 parts In-Stock

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Kulean Microsystems

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Overview

Upgrade your electronics with the MV104RLRE Varactor Diode from Onsemi! With a minimum quality factor of 100, this diode offers superior performance and reliability. Perfect for applications requiring variable capacitance, this diode features two common cathode elements in a round package shape. The Onsemi brand ensures top-notch quality and innovation, making this diode a must-have for your projects. Get more value and benefits with the MV104RLRE Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 100

A higher quality factor indicates better performance and efficiency in tuning applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the diode components.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient control and tuning capabilities.

Package Shape: ROUND

The round shape of the package offers ease of installation and compatibility with various devices.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit connections and configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style makes the diode suitable for applications where space is limited.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the diode can withstand demanding conditions and environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and integration into electronic circuits.

Maximum Power Dissipation: 0.28 W

The diode's high maximum power dissipation rating allows for handling of power spikes without damage.

Nominal Diode Capacitance: 39.5 pF

The nominal capacitance value indicates the diode's ability to store and release charge effectively.

Minimum Breakdown Voltage: 32 V

The high minimum breakdown voltage enhances the diode's reliability and protection against voltage surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for dynamic tuning and adjustment of capacitance in RF circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides secure mechanical mounting and robust connections in PCBs.

No. of Elements: 2

Having 2 elements enables dual functionality and enhanced tuning capabilities in electronic circuits.

Diode Cap Tolerance: 6.33 %

The diode's capacitance tolerance ensures accurate and consistent performance in tuning applications.

Diode Element Material: SILICON

Silicon material for the diode elements offers stable and reliable performance over a wide temperature range.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio indicates the diode's ability to provide a wide range of capacitance values for tuning.

Technical Specifications

Varactor Diodes MV104RLRE attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

1% MATCHING GUARANTEED

Minimum Breakdown Voltage:

32 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

6.33 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

39.5 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

100

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV104RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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