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SVC321B

Onsemi

SVC321B by Onsemi

The Onsemi SVC321B is a varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C. Its plastic/epoxy package body material and cylindrical shape make it suitable for through-hole mounting in electronic circuits.

Median Price

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Lifecycle Status

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1k+

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Digiode

USA . 2,294 parts In-Stock

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Vyrian

USA . 667 parts In-Stock

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Problanco Electronics

Mexico . 6,296 parts In-Stock

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TANS Electronics

Latvia . 5,738 parts In-Stock

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Kulean Microsystems

USA . 2,921 parts In-Stock

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Corphita

USA . 2,242 parts In-Stock

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SupplyDigital Components

Austria . 1,593 parts In-Stock

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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Corohmni

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Overview

Unlock the potential of your electronic devices with the SVC321B Varactor Diode from Onsemi. Manufactured with precision and quality in mind, this diode offers a minimum Quality Factor of 200, ensuring optimal performance in a variety of applications. With a sleek cylindrical package design and a maximum operating temperature of 100 °C, this diode is perfect for high-frequency tuning circuits and voltage-controlled oscillators. Experience the value and reliability that Onsemi is known for with the SVC321B Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor ensures efficient performance and signal stability in communication systems.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the varactor diode.

Config: SINGLE

The single configuration simplifies the circuit design and integration of the varactor diode into various electronic devices.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current helps in minimizing power consumption and improving overall efficiency of the varactor diode.

Package Shape: ROUND

The round package shape allows for easier handling and installation of the varactor diode in electronic assemblies.

Reverse Test Voltage: 9 V

The 9V reverse test voltage rating ensures safe operation and reliable performance of the varactor diode under specified conditions.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and installation process of the varactor diode in electronic circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, making it suitable for applications where size constraints are a concern.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this varactor diode can withstand high temperature environments without compromising performance.

Terminal Position: BOTTOM

The bottom terminal position provides convenience in soldering and connecting the varactor diode in electronic circuits.

Minimum Breakdown Voltage: 16 V

A high minimum breakdown voltage of 16V ensures reliability and protection against voltage surges or spikes in the electronic system.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode type offers flexibility in adjusting the capacitance level as needed in different electronic applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form facilitates easy mounting and soldering of the varactor diode onto PCBs or circuit boards.

Maximum Repetitive Peak Reverse Voltage: 16 V

A maximum repetitive peak reverse voltage rating of 16V ensures reliable performance and protection against reverse voltage conditions.

Diode Cap Tolerance: 3 %

The 3% diode cap tolerance ensures precise and accurate capacitance values, leading to consistent performance in electronic circuits.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high reliability, stability, and performance of the varactor diode.

Minimum Diode Capacitance Ratio: 15.5

A high minimum diode capacitance ratio of 15.5 signifies the variability and control over the capacitance values of the varactor diode for different applications.

Technical Specifications

Varactor Diodes SVC321B attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

3 %

Minimum Diode Capacitance Ratio:

15.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC321B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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