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SVC321A

Onsemi

SVC321A by Onsemi

The Onsemi SVC321A is a varactor diode with a min quality factor of 200, ideal for RF applications. Featuring a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C. Its single configuration and variable capacitance make it suitable for tuning circuits in electronic devices.

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Digiode

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Vyrian

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Problanco Electronics

Mexico . 5,907 parts In-Stock

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SupplyDigital Components

Austria . 4,227 parts In-Stock

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Kulean Microsystems

USA . 1,106 parts In-Stock

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TANS Electronics

Latvia . 1,003 parts In-Stock

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Corphita

USA . 788 parts In-Stock

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Corohmni

South Africa . 220 parts In-Stock

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UHIMA Technologies

Türkiye . 150 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the SVC321A Varactor Diode by Onsemi. Known for its high-quality manufacturing and reliable performance, this diode offers a wide range of applications in RF tuning, frequency modulation, and signal processing. Experience the value of precision engineering with a diode that boasts a minimum Quality Factor of 200 and a low Maximum Reverse Current of 0.1uA. With a focus on maximizing efficiency and functionality, the SVC321A is the perfect choice for demanding electronic systems where performance matters.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor means better performance and efficiency, making this varactor diode a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable, suitable for compact and long-lasting designs.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it convenient for users.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and improved overall efficiency of the circuit.

Package Shape: ROUND

Round package shape offers easy mounting and alignment in various applications, enhancing ease of use.

Reverse Test Voltage: 9 V

Sufficient reverse test voltage ensures reliable performance and protection against reverse polarity.

No. of Terminals: 2

Having two terminals simplifies the connection and operation of the varactor diode in a circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides easy handling, installation, and compatibility with a wide range of equipment and systems.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for reliable performance in demanding environmental conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, enhancing the overall usability of the diode.

Minimum Breakdown Voltage: 16 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads, increasing the reliability of the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers precise and adjustable capacitance values, making it ideal for tuning and frequency control applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form simplifies the assembly process and ensures secure connections, enhancing the overall durability of the diode.

Maximum Repetitive Peak Reverse Voltage: 16 V

Having a maximum repetitive peak reverse voltage of 16 V ensures reliable and consistent performance under varying voltage conditions.

Diode Cap Tolerance: 3 %

Low diode capacitance tolerance of 3% ensures accurate and stable capacitance values, making the diode suitable for precision applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high durability, thermal stability, and reliable performance over a wide temperature range.

Minimum Diode Capacitance Ratio: 15.5

High minimum diode capacitance ratio of 15.5 allows for precise tuning and control of capacitance, making it ideal for frequency modulation and tuning applications.

Technical Specifications

Varactor Diodes SVC321A attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

3 %

Minimum Diode Capacitance Ratio:

15.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC321A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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