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SVC323

Onsemi

SVC323 by Onsemi

The Onsemi SVC323 is a single variable capacitance diode with 462.8 pF nominal capacitance, 16 V breakdown voltage, and 17.5 min capacitance ratio. It is designed for L Band applications requiring high quality factor components in plastic/epoxy package with through-hole terminals.

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< 1k

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Digiode

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Vyrian

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Mexico . 8,013 parts In-Stock

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Kulean Microsystems

USA . 7,552 parts In-Stock

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SupplyDigital Components

Austria . 4,864 parts In-Stock

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TANS Electronics

Latvia . 4,400 parts In-Stock

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Kepictronics

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Corphita

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Corohmni

South Africa . 460 parts In-Stock

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UHIMA Technologies

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Overview

Enhance your electronic designs with the SVC323 Varactor Diodes from Onsemi. With a minimum Quality Factor of 200, these versatile diodes offer exceptional performance in L-band applications. Manufactured with high-quality materials and precision engineering, Onsemi ensures reliability and durability. Whether you're working on RF filters, voltage-controlled oscillators, or frequency modulators, the SVC323 provides exceptional value, flexibility, and performance. Elevate your projects with Onsemi's Varactor Diodes today.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures better performance and efficiency in signal filtering or tuning applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good protection and durability for the varactor diode, making it suitable for various conditions.

Config: SINGLE

Single configuration simplifies the design and integration process of the varactor diode into electronic circuits.

Frequency Band: L BAND

L band frequency range is commonly used in communication systems, making this varactor diode suitable for such applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement of the varactor diode on circuit boards.

No. of Terminals: 3

Having 3 terminals enables flexible connectivity options and allows for more versatile circuit designs.

Package Style (Meter): IN-LINE

In-line package style offers space-saving benefits and easier connection in linear electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper alignment in the circuit layout.

Nominal Diode Capacitance: 462.8 pF

Suitable capacitance value for various tuning and frequency control applications.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16V, this varactor diode can handle high voltages safely.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diodes are specifically designed for voltage-controlled capacitance applications, offering precise tuning capabilities.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for secure and reliable connections on circuit boards.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage of 16V ensures the diode can handle reverse voltage stress during operation.

Diode Element Material: SILICON

Silicon material provides good performance and reliability characteristics, making it a suitable choice for varactor diodes.

Minimum Diode Capacitance Ratio: 17.5

Higher diode capacitance ratio allows for more precise tuning and modulation in electronic circuits.

Technical Specifications

Varactor Diodes SVC323 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

17.5

Nominal Diode Capacitance:

462.8 pF

Diode Element Material:

SILICON

Frequency Band:

L BAND

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC323 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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