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TIV22

Texas Instruments

TIV22 by Texas Instruments

TIV22 by Texas Instruments is a single varactor diode with 11 pF capacitance, 30 V breakdown voltage, and 0.25 W power dissipation. Ideal for ultra high frequency applications due to its isolated case connection and silicon diode element material.

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Vyrian

USA . 5,335 parts In-Stock

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Digiode

USA . 808 parts In-Stock

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One Stop Electronics

USA . 1,372 parts In-Stock

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$0.010

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Semicontronic

India . 663 parts In-Stock

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Parana Technologies

USA . 1,397 parts In-Stock

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$1.501

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DigiPath Technology Company

USA . 1,593 parts In-Stock

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IDEA Electronic Components Group

UK . 1,837 parts In-Stock

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ChromeModa Solutions

Germany . 1,363 parts In-Stock

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Ampacity Inc.

Singapore . 1,598 parts In-Stock

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AZTECH Wire

Italy . 764 parts In-Stock

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Corphita

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Overview

Enhance your electronic projects with the TIV22 varactor diode from Texas Instruments. With a minimum quality factor of 150, this high-quality diode offers superior performance in ultra-high frequency applications. The ceramic, glass-sealed package ensures durability while the variable capacitance design allows for precise tuning. Whether you are working on signal modulation or frequency synthesis, the TIV22 provides reliable and efficient operation. Trust Texas Instruments for top-notch components that deliver exceptional value and performance.

Feature Benefit Bullets

Minimum Quality Factor: 150

Higher quality factor means better performance and more stable operation, making this varactor diode a reliable choice.

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed materials enhances the durability and reliability of the diode, ensuring long-lasting performance.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, this varactor diode is ideal for high-performance RF circuits.

Package Shape: ROUND

Round shape allows for easy mounting and integration into circuit designs, providing versatility in application.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, making it easier to incorporate into circuit designs.

Package Style (Meter): LONG FORM

Long form package style provides stability and ease of handling during installation, ensuring reliable performance.

Terminal Position: AXIAL

Axial terminal position allows for easy soldering and connection in circuits, enhancing usability and reliability.

Case Connection: ISOLATED

Isolated case connection ensures better protection and prevents interference, improving the overall performance and reliability of the diode.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25W, this varactor diode can handle higher power levels, making it suitable for high-power applications.

Nominal Diode Capacitance: 11 pF

Low nominal capacitance of 11pF allows for precise tuning and control, making it ideal for frequency modulation and tuning applications.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage of 30V ensures stable operation and protection against voltage spikes, enhancing the reliability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for adjustable capacitance levels, enabling flexibility in tuning and modulation applications.

Terminal Form: WIRE

Wire terminal form offers easy connection and soldering, simplifying the installation process and ensuring a secure connection.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage of 30V provides protection against reverse voltage spikes, ensuring the long-term reliability of the diode.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures stable performance and reliable operation, making it a durable choice for various applications.

Minimum Diode Capacitance Ratio: 4

Minimum diode capacitance ratio of 4 allows for a wide range of capacitance values, providing flexibility in tuning and modulation applications.

Technical Specifications

Varactor Diodes TIV22 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Additional Features:

AVAILABLE IN MATCHED SETS

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

4

Nominal Diode Capacitance:

11 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-34

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

TIV22 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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