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TIV21

Texas Instruments

TIV21 by Texas Instruments

TIV21 by Texas Instruments is a Varactor Diode with a Min Quality Factor of 150, Nominal Capacitance of 11 pF, and Breakdown Voltage of 30 V. Ideal for Ultra High Frequency applications due to its Variable Capacitance nature and max power dissipation of 0.25 W in an isolated package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,400 parts In-Stock

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4,400

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Vyrian

USA . 2,703 parts In-Stock

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2,703

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Distributors (Availability)

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Parana Technologies

USA . 2,013 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

$1.435

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2,013

$0.059

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$1.435

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DigiPath Technology Company

USA . 57 parts In-Stock

1+ parts

$0.065

100+ parts

$0.060

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57

$0.065

$0.060

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ChromeModa Solutions

Germany . 2,103 parts In-Stock

1+ parts

$0.066

100+ parts

$0.054

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2,103

$0.066

$0.054

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IDEA Electronic Components Group

UK . 1,746 parts In-Stock

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$0.066

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$0.059

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1,746

$0.066

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$0.059

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Ampacity Inc.

Singapore . 985 parts In-Stock

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$1.010

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985

$1.010

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One Stop Electronics

USA . 412 parts In-Stock

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$1.010

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412

$1.010

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Semicontronic

India . 990 parts In-Stock

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$2.010

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$1.960

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$1.950

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990

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 477 parts In-Stock

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$13.990

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477

$13.990

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Corphita

USA . 1,468 parts In-Stock

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1,468

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Corohmni

South Africa . 464 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the TIV21 by Texas Instruments. Crafted with precision and expertise, this varactor diode offers unparalleled quality and reliability. From ultra-high frequency applications to cutting-edge technology, this diode is designed to deliver exceptional performance. With a minimum quality factor of 150 and a maximum power dissipation of 0.25W, the TIV21 is built to exceed expectations. Elevate your projects with the superior value and benefits that only Texas Instruments can provide.

Feature Benefit Bullets

Minimum Quality Factor: 150

A high minimum quality factor ensures better performance and stability in high frequency applications.

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material provides excellent protection and durability to the varactor diode, making it reliable for various environments.

Config: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in applications.

Frequency Band: ULTRA HIGH FREQUENCY

Designed specifically for ultra high frequency applications, this varactor diode is suitable for demanding RF designs.

Package Shape: ROUND

The round package shape is compact and easy to handle, making it convenient for installation and compact designs.

No. of Terminals: 2

With only 2 terminals, this varactor diode is easy to connect and use in circuits, simplifying the overall design.

Package Style (Meter): LONG FORM

The long form package style provides additional protection and support for the varactor diode, ensuring long-term reliability.

Terminal Position: AXIAL

The axial terminal position allows for easy insertion and soldering, making it user-friendly for technicians.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures proper functioning of the varactor diode in circuits.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25W, this varactor diode can handle higher power levels, suitable for demanding applications.

Nominal Diode Capacitance: 11 pF

The nominal diode capacitance of 11 pF allows for precise tuning and control in RF applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures protection against voltage spikes and overloads, increasing the diode's lifespan.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it versatile for different applications.

Terminal Form: WIRE

The wire terminal form allows for easy connections and flexibility in circuit designs, enhancing user convenience.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30V, this varactor diode can withstand reverse voltage conditions, increasing its reliability.

Diode Element Material: SILICON

Made from silicon, the diode element material offers excellent performance and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 4.5

The minimum diode capacitance ratio of 4.5 allows for precise tuning and control in RF circuits, enhancing overall performance.

Technical Specifications

Varactor Diodes TIV21 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Additional Features:

AVAILABLE IN MATCHED SETS

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

11 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-34

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

TIV21 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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