Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MV2109RLRAG by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.
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$0.310
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$0.134
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$0.141
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$20.550
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UHIMA Technologies
A high quality factor ensures excellent performance and efficient signal processing, making this varactor diode a reliable choice.
The use of plastic/epoxy material in the package body provides durability and resistance to environmental factors, increasing the longevity of the diode.
Single configuration simplifies the setup and integration of the varactor diode in electronic circuits, making it easy to use for various applications.
With the ability to operate in high and ultra-high frequency bands, this varactor diode is suitable for a wide range of wireless communication and RF applications.
The round shape of the package ensures uniform distribution of stresses, improving reliability and minimizing the risk of mechanical failure.
Having 2 terminals simplifies the connection and installation process, making this varactor diode user-friendly and easy to integrate into circuits.
The cylindrical package style provides a compact design, saving space in electronic devices and allowing for efficient heat dissipation.
The use of tin, silver, and copper terminal finish ensures good conductivity, corrosion resistance, and solderability, enhancing the overall performance of the varactor diode.
With a maximum power dissipation of 0.28W, this varactor diode can handle high power levels without overheating, ensuring reliable operation in demanding applications.
The nominal capacitance value of 33 pF enables precise control of the capacitance in the circuit, making this varactor diode suitable for tuning and frequency control applications.
A minimum breakdown voltage of 30V provides protection against voltage spikes and surges, ensuring the longevity and reliability of the varactor diode.
The peak reflow temperature of 260°C allows for reliable soldering during the manufacturing process, ensuring secure connections and stable performance of the varactor diode.
As a variable capacitance diode, this product offers adjustable capacitance levels, allowing for flexible tuning and modulation in electronic circuits and communication systems.
The through-hole terminal form simplifies the assembly process and provides a secure connection, making this varactor diode suitable for through-hole PCB mounting.
The maximum repetitive peak reverse voltage of 30V ensures reliable operation and protection against reverse voltage conditions, making this varactor diode a durable and robust choice.
With a diode capacitance tolerance of 10%, this varactor diode offers precise and consistent capacitance values, ensuring accurate performance in tuning and modulation applications.
The use of silicon as the diode element material provides high conductivity, low noise, and excellent thermal stability, enhancing the overall performance and reliability of the varactor diode.
A minimum capacitance ratio of 2.5 ensures a wide range of capacitive tuning options, making this varactor diode versatile and suitable for a variety of RF and communication applications.
Varactor Diodes MV2109RLRAG attributes and parameters. Explore more Varactor Diodes devices from Onsemi
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MV2109RLRAG Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
PCN Obsolescence/ EOL - Multiple Devices 30/Jun/2006
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
2N7002
Calogic
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Central Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
TCA6424ARGJR
Texas Instruments
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
ST3485EBDR
STMicroelectronics
ST3485EBDR by STMicroelectronics is a Line Driver & Receiver with 3.3V power supply, EIA-422/EIA-485 interface standard, and 30ns max transmit delay. It is ideal for industrial applications requiring differential output and operates in temperatures ranging from -40 to 85°C.
Vishay Intertechnology
Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.
2N2222A
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
1N4148
Continental Device India
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Db Lectro
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
OPA2227UA
OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
Philips Components
Silicon Standard
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
BB179BLX
NXP Semiconductors
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB179/T3
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB215TRL
BB215TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for ultra-high frequency applications. It features a min capacitance ratio of 7.6 and an isolated case connection. Ideal for RF tuning and signal processing in compact devices.
BB804
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MMVL409T1
Onsemi
MMVL409T1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and operates at a max power dissipation of 0.2 W. This single-configured diode in small outline package is ideal for RF tuning circuits.
BB149-T
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV2109L
MMBV2109L by Onsemi is a Varactor Diode with a Min Quality Factor of 200, Nominal Capacitance of 33 pF, and Breakdown Voltage of 30 V. It is used in RF applications for frequency tuning due to its Variable Capacitance property.
BB178/T3
BB182-T
TIV21
TIV21 by Texas Instruments is a Varactor Diode with a Min Quality Factor of 150, Nominal Capacitance of 11 pF, and Breakdown Voltage of 30 V. Ideal for Ultra High Frequency applications due to its Variable Capacitance nature and max power dissipation of 0.25 W in an isolated package.
BA591/A2,115
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V; Nominal Diode Capacitance: .8 pF;
LV2209RLRA
LV2209RLRA by Onsemi is a Varactor Diode with 33pF capacitance, 25V breakdown voltage, and 200 min quality factor. Ideal for RF applications due to its variable capacitance feature and can operate at temperatures up to 150 °C. Its through-hole design and tin-lead finish make it suitable for various electronic circuits.
MV2101RL1
MV2101RL1 by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance feature and can operate at temperatures up to 150 °C.
934042930115
The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.
MMBV2105LT1
MMBV2105LT1 by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.
BB119133
VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MV2201
Motorola
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 6.8 pF; Maximum Repetitive Peak Reverse Voltage: 25 V; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
MMBV109LT1G
MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.
MV104RLRP
MV104RLRP by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, it has a Max Operating Temperature of 125 °C and a Min Breakdown Voltage of 32V.
SMV2019-079LF
Skyworks Solutions
SMV2019-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 0.8 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. Ideal for RF applications due to its small outline package and high capacitance ratio. Surface mount design with matte tin finish makes it suitable for compact electronic devices.
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MV2115
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
New Jersey Semiconductor Products
VARIABLE CAPACITANCE DIODE; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Minimum Operating Temperature: -55 Cel; Diode Element Material: SILICON; Config: SINGLE;
Cobham Plc
Knox Semiconductors
M/a-com Technology Solutions
Leshan Radio
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 100 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;
Aeroflex/micrometrics
Aeroflex/metelics
MV2105RLRM
MV2101ZL1
MV2105ZL1
MV2105RLRE
MV2101RLRP
MV2105RLRP
MV2108
MV2101G
MV2101RLRA
MV2105
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
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12,000 In-Stock
Total price ≈ $80,197.29
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