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MV2105RLRE

Onsemi

MV2105RLRE by Onsemi

MV2105RLRE by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems. Operating temperature up to 150 °C makes it suitable for high-temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,816 parts In-Stock

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Digiode

USA . 128 parts In-Stock

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Kulean Microsystems

USA . 6,281 parts In-Stock

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Problanco Electronics

Mexico . 6,032 parts In-Stock

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SupplyDigital Components

Austria . 5,207 parts In-Stock

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Corphita

USA . 2,111 parts In-Stock

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TANS Electronics

Latvia . 464 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Corohmni

South Africa . 273 parts In-Stock

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Overview

Elevate your electronic designs with the MV2105RLRE Varactor Diode from Onsemi. Renowned for their high-quality components, Onsemi delivers reliable and efficient solutions for a wide range of applications. The MV2105RLRE offers customers exceptional value with its superior performance, compact design, and versatile capabilities. Whether you're working on telecommunications, radar systems, or frequency modulation circuits, this varactor diode is sure to exceed your expectations. Trust Onsemi for top-notch products that elevate your projects to new heights.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor indicates better frequency stability and lower losses, making this varactor diode suitable for high-performance applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic applications.

Package Shape: ROUND

Round package shape allows for easy mounting and integration, providing a compact and space-saving solution.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and reduces the risk of errors during installation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates easy handling and installation, making it convenient for users.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures and maintain stable performance in demanding environments.

Terminal Finish: TIN LEAD

Tin-lead terminal finish enhances solderability and ensures secure connections, improving the overall reliability of the diode.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting process and provides a clean and organized layout in the circuit design.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle power efficiently and effectively, reducing the risk of overheating.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF indicates the range of variable capacitance available, offering flexibility in tuning and adjusting the diode's performance.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage of 30 V ensures reliable operation and protection against voltage surges or fluctuations in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for precise tuning and adjustment of capacitance, making it ideal for frequency modulation and tuning applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables easy and secure mounting on the circuit board, providing mechanical stability and robust connections.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% ensures consistent and accurate performance, allowing for predictable behavior in different operating conditions.

Diode Element Material: SILICON

Silicon diode element material offers good electrical properties and temperature stability, ensuring reliable and consistent performance over a wide range of temperatures.

Minimum Diode Capacitance Ratio: 2.5

Having a minimum capacitance ratio of 2.5 allows for a significant change in capacitance, providing precise control and modulation for frequency tuning applications.

Technical Specifications

Varactor Diodes MV2105RLRE attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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