Loading...

MV2101RL1

Onsemi

MV2101RL1 by Onsemi

MV2101RL1 by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF tuning applications due to its variable capacitance feature and can operate at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,590

-

-

-

-

Digiode

USA . 836 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

836

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,486 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,486

-

-

-

-

SupplyDigital Components

Austria . 5,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,496

-

-

-

-

Corphita

USA . 2,033 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,033

-

-

-

-

TANS Electronics

Latvia . 892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

892

-

-

-

-

Problanco Electronics

Mexico . 496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

496

-

-

-

-

Corohmni

South Africa . 464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

464

-

-

-

-

UHIMA Technologies

Türkiye . 46 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

46

-

-

-

-

Overview

Discover the MV2101RL1 by Onsemi, a top-quality variable capacitance diode that offers superior performance and reliability. With a minimum quality factor of 450 and a nominal capacitance of 6.8 pF, this diode is perfect for a wide range of applications. Onsemi's reputation for excellence ensures that you are getting a product that meets the highest standards. Whether used in RF tuning circuits or frequency modulators, the MV2101RL1 delivers exceptional value and benefits to customers. Upgrade your electronic projects with the MV2101RL1 and experience the difference today!

Feature Benefit Bullets

Minimum Quality Factor: 450

Higher quality factor indicates better performance and stability, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers good protection and durability, ensuring longevity and resistance to environmental factors.

Config: SINGLE

Single configuration simplifies installation and circuit design, making it suitable for straightforward applications.

Package Shape: ROUND

Round package shape provides easy handling and integration into circuit boards, facilitating smooth assembly processes.

No. of Terminals: 2

Having only 2 terminals simplifies connections and reduces chances of errors during installation, making it user-friendly.

Package Style (Meter): CYLINDRICAL

Cylindrical package style allows for efficient space utilization and easy integration in tight spaces, maximizing flexibility in circuit layout.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures, ensuring reliable performance under harsh conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures secure connections, contributing to reliable functionality in various applications.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and enables easy integration into circuit designs, enhancing overall ease of use.

Maximum Power Dissipation: 0.28 W

With a maximum power dissipation of 0.28 W, this varactor diode can handle moderate power levels, making it suitable for diverse applications.

Nominal Diode Capacitance: 6.8 pF

The nominal capacitance value of 6.8 pF indicates good tuning capabilities, allowing for precise frequency adjustments in RF applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against voltage surges, enhancing the reliability and safety of the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning RF circuits, making it suitable for frequency modulation and control applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form enables secure and stable mounting on PCBs, ensuring reliable connections and ease of assembly.

Diode Cap Tolerance: 10 %

A tolerance of 10% in capacitance ensures consistency and accuracy in circuit performance, making this varactor diode a dependable choice.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics and reliability, ensuring stable operation over a wide temperature range.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio of 2.5 allows for a wide range of capacitance values, offering versatility in tuning applications for various frequencies.

Technical Specifications

Varactor Diodes MV2101RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20