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MV2101G

Onsemi

MV2101G by Onsemi

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

Median Price

$0.175

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,990 parts In-Stock

1+ parts

-

100+ parts

$0.172

1k+ parts

$0.143

10k+ parts

$0.127

5,990

-

$0.172

$0.143

$0.127

Verical

USA . 5,990 parts In-Stock

1+ parts

-

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$0.178

5,990

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$0.178

Distributors (In-Stock)

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Digiode

USA . 754 parts In-Stock

1+ parts

$0.134

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754

$0.134

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Vyrian

USA . 6,356 parts In-Stock

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6,356

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DigiKey Marketplace

USA . 6,000 parts In-Stock

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6,000

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Distributors (Availability)

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Corphita

USA . 1,174 parts In-Stock

1+ parts

$0.127

100+ parts

-

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1,174

$0.127

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Corohmni

South Africa . 215 parts In-Stock

1+ parts

$0.141

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215

$0.141

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AZTECH Wire

Italy . 222 parts In-Stock

1+ parts

$12.600

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222

$12.600

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TANS Electronics

Latvia . 8,352 parts In-Stock

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8,352

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Kulean Microsystems

USA . 7,456 parts In-Stock

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7,456

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Continental Prestige Electronics

USA . 6,000 parts In-Stock

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$0.125

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6,000

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$0.125

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Problanco Electronics

Mexico . 4,436 parts In-Stock

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4,436

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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UHIMA Technologies

Türkiye . 758 parts In-Stock

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758

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SupplyDigital Components

Austria . 677 parts In-Stock

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677

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Overview

Unlock the potential of your high frequency to ultra-high frequency applications with the MV2101G Varactor Diode by Onsemi. With a minimum quality factor of 450 and a nominal diode capacitance of 6.8 pF, this diode offers precise control and superior performance. Manufactured by Onsemi, a trusted name in semiconductor technology, the MV2101G guarantees reliability and durability. Whether you're working on RF tuning, voltage-controlled oscillators, or frequency modulation circuits, this diode's abrupt variable capacitance classification and high power dissipation make it the perfect choice. Experience the value and benefits of the MV2101G Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 450

Having a high minimum quality factor indicates that this varactor diode offers excellent performance and stability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and protection for the diode, making it suitable for various environments.

Config: SINGLE

The single configuration simplifies the design and installation process, making this varactor diode easy to use in different circuits.

Variable Capacitance Diode Classification: ABRUPT

An abrupt variable capacitance diode classification indicates precise and rapid changes in capacitance, making it ideal for frequency tuning applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

With support for high frequency to ultra high frequency bands, this varactor diode is versatile and can be used in a wide range of wireless communication systems.

Package Shape: ROUND

The round package shape helps in efficient and space-saving integration of the varactor diode into circuit designs.

No. of Terminals: 2

Having only two terminals simplifies the connection process and reduces complexity in circuit layouts.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides reliable electrical connections and corrosion resistance for long-term performance.

Terminal Position: BOTTOM

The bottom terminal position makes it easier to mount and solder the varactor diode onto PCBs or other platforms.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation capability ensures that the varactor diode can handle power fluctuations without risking damage.

Nominal Diode Capacitance: 6.8 pF

The nominal diode capacitance of 6.8 pF allows for precise and accurate tuning of the diode's capacitance in different frequency applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures that the varactor diode can handle high voltage levels without breakdown or damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this varactor diode can withstand high-temperature soldering processes without affecting its performance.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for dynamic tuning and adjustment of capacitance levels, making it suitable for frequency modulation applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables easy and secure mounting of the varactor diode on PCBs, ensuring stable connections and reliability.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage rating of 30V protects the varactor diode from reverse voltage spikes, enhancing its lifespan and performance.

Diode Cap Tolerance: 10 %

The diode capacitance tolerance of 10% ensures consistency and accuracy in capacitance values, reducing variability in circuit performance.

Diode Element Material: SILICON

The use of silicon as the diode element material offers reliability, stability, and consistent performance in various temperature and voltage conditions.

Minimum Diode Capacitance Ratio: 2.5

Having a minimum diode capacitance ratio of 2.5 ensures that the varactor diode can provide a wide range of capacitance values for frequency tuning and modulation.

Technical Specifications

Varactor Diodes MV2101G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2101G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-434-3024, 5961004343024

NIIN

004343024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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