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MV2104

Onsemi

MV2104 by Onsemi

The Onsemi MV2104 is a single varactor diode with a min quality factor of 400, nominal capacitance of 12 pF, and max operating temperature of 150 °C. It is commonly used in RF applications for frequency tuning due to its variable capacitance properties.

Median Price

$12.500

Lifecycle Status

Suppliers In-Stock

9

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1k+

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American Microsemiconductor Inc.

USA . 10,585 parts In-Stock

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Digiode

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Vyrian

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Sogenti Electronics

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EMSNET

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ACDS - Activité Composants Distribution Service

France . 54 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Fibra_Brandt Electronic GMBH

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Corohmni

South Africa . 487 parts In-Stock

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SupplyDigital Components

Austria . 8,373 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 7,404 parts In-Stock

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Problanco Electronics

Mexico . 6,352 parts In-Stock

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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Overview

Experience the superior quality and performance of the MV2104 Varactor Diode by Onsemi. With a minimum quality factor of 400, this diode offers unmatched reliability and precision in various applications. Onsemi, a trusted manufacturer known for its cutting-edge technology, ensures that the MV2104 delivers exceptional value and benefits to customers. Whether used in RF tuning circuits or voltage-controlled oscillators, this diode's variable capacitance and high breakdown voltage make it a versatile and essential component for your electronic projects. Trust Onsemi's expertise and choose the MV2104 for your next application.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures excellent performance and stability in frequency tuning applications.

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, enhancing its durability and reliability.

Config: SINGLE

Simplified and easy to use configuration for various applications.

Package Shape: ROUND

Compact and space-saving design that allows for easy integration into electronic circuits.

No. of Terminals: 2

Simple connection setup, making it user-friendly for circuit design.

Package Style (Meter): CYLINDRICAL

Well-suited for applications requiring cylindrical packaging, such as tuning circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in demanding environments.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for secure connections.

Terminal Position: BOTTOM

Facilitates easy mounting and integration into circuit boards.

Maximum Power Dissipation: 0.28 W

Can handle higher power levels without performance degradation.

Nominal Diode Capacitance: 12 pF

Suitable for applications requiring precise capacitance values.

Minimum Breakdown Voltage: 30 V

Ensures reliability and protection against voltage spikes or surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for variable capacitance, making it versatile for frequency tuning applications.

Terminal Form: THROUGH-HOLE

Easy to mount and solder onto circuit boards for secure connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Provides protection against reverse voltage conditions, ensuring longevity.

Diode Cap Tolerance: 10 %

Offers tolerance for variations in capacitance values, ensuring consistent performance.

Diode Element Material: SILICON

High-quality material for reliable and consistent performance over time.

Minimum Diode Capacitance Ratio: 2.5

Allows for a wide range of capacitance adjustment, enhancing flexibility in circuit design.

Technical Specifications

Varactor Diodes MV2104 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2104 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-095-5855, 5961010955855, 5961-25-119-5953, 5961251195953

NIIN

010955855, 251195953

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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