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MMBV109LT1

Onsemi

MMBV109LT1 by Onsemi

MMBV109LT1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a hyperabrupt variable capacitance diode classification and a nominal capacitance of 29 pF. This small outline diode has a max power dissipation of 0.2 W and operates at a min breakdown voltage of 30 V.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Vyrian

USA . 1,759 parts In-Stock

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Semtec, LLC

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Digiode

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Resion

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PC Components Company LLC

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Prism Electronics

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Semi Source

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Bristol Electronics

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Component Stockers USA

USA . 769 parts In-Stock

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Kulean Microsystems

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Overview

Unlocking a world of possibilities with the MMBV109LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality varactor diodes that are essential for very high frequency applications. With a minimum quality factor of 200 and a hyperabrupt variable capacitance diode classification, this product offers superior performance and reliability. Perfect for a wide range of applications, the MMBV109LT1 provides customers with exceptional value, benefits, and advantages that will elevate their projects to new heights.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and stability which makes this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as package body material makes the diode lightweight, cost-effective, and resistant to environmental factors, making it suitable for a variety of applications.

Config: SINGLE

Single configuration simplifies circuit design and facilitates easy integration, making this varactor diode a convenient choice for design engineers.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt varactor diodes provide precise and responsive tuning capabilities, making them ideal for frequency agility and signal processing applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency operations, this varactor diode ensures efficient performance in demanding RF circuits and communication systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and labor costs in production processes.

Package Shape: RECTANGULAR

Rectangular package shape offers a compact and space-saving form factor, enabling easy placement on PCBs with limited real estate.

No. of Terminals: 3

The three-terminal configuration provides versatility in circuit connections and allows for flexible usage in various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style enhances thermal performance, reduces parasitic capacitance, and improves signal integrity, ensuring high reliability in operation.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures excellent solderability and robust interconnection, making it suitable for high-reliability applications in harsh environments.

Terminal Position: DUAL

Dual terminal position simplifies installation and enhances connectivity options, providing design flexibility and convenience for circuit integration.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this varactor diode can handle moderate power levels, ensuring operational stability and reliability in demanding conditions.

Nominal Diode Capacitance: 29 pF

The nominal capacitance value of 29 pF allows for precise tuning and frequency selection, making this varactor diode suitable for high-performance RF applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against voltage spikes and overloads, enhancing the overall robustness and reliability of the diode.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and thermal reliability during assembly processes, ensuring long-term performance and integrity.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C indicates high-temperature resistance, making this varactor diode suitable for lead-free soldering processes and stringent thermal environments.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode type offers dynamic tuning capabilities, enabling precise frequency control and modulation, making it ideal for agile RF systems.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and rework, simplifying assembly and maintenance procedures in electronic circuits and systems.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V ensures reliable and consistent performance in reverse bias conditions, making this varactor diode suitable for RF signal modulation and switching applications.

Diode Cap Tolerance: 10.34 %

The diode capacitance tolerance of 10.34% ensures consistent and accurate tuning capabilities, enabling precise frequency selection and modulation in RF circuits.

Diode Element Material: SILICON

Silicon diode element material offers stable performance over a wide temperature range, ensuring reliability and durability in diverse operating conditions.

Minimum Diode Capacitance Ratio: 5

The minimum diode capacitance ratio of 5 indicates a wide tuning range and flexibility in frequency selection, making this varactor diode suitable for versatile RF applications.

Technical Specifications

Varactor Diodes MMBV109LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV109LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-551-9523, 5961015519523, 5961-01-414-5832, 5961014145832

NIIN

015519523, 014145832

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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