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1N4801

Onsemi

1N4801 by Onsemi

1N4801 by Onsemi is a varactor diode with 6.8 pF capacitance, 100 V reverse voltage, and 0.005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

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SupplyDigital Components

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Overview

Looking for a reliable and high-quality varactor diode? Look no further than the 1N4801 by Onsemi. With a minimum quality factor of 15 and a maximum reverse current of 0.005 uA, this diode is perfect for applications requiring precise variable capacitance control. The glass package body material ensures durability, while the abrupt variable capacitance diode classification guarantees optimal performance. Trust Onsemi's reputation for excellence and invest in the 1N4801 for all your capacitance needs. Unlock new possibilities with this versatile diode and experience the value it brings to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor means better performance and stability in high frequency applications. This varactor diode is optimized for superior quality factor, making it a reliable choice for demanding use cases.

Package Body Material: GLASS

Glass packaging offers excellent thermal performance and durability, ensuring reliable operation of the varactor diode under harsh environmental conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to incorporate this varactor diode into various electronic systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes provide sharp tuning characteristics, allowing for precise frequency control in voltage-controlled oscillators and other RF applications.

Maximum Reverse Current: 0.005 uA

Low reverse current ensures minimal power loss and improved efficiency in circuits utilizing this varactor diode.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling of the varactor diode, enhancing convenience during assembly and maintenance.

Reverse Test Voltage: 100 V

High reverse test voltage rating ensures reliable performance and protection against voltage spikes in the reverse direction, increasing the longevity of the varactor diode.

No. of Terminals: 2

Having two terminals simplifies the connection and usage of this varactor diode in electronic circuits, reducing complexity and potential points of failure.

Package Style (Meter): LONG FORM

Long form package style provides ample space for internal components, contributing to improved heat dissipation and overall reliability of the varactor diode.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in demanding thermal environments, making this varactor diode suitable for a wide range of applications.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures that this varactor diode can function effectively in both extreme cold and hot conditions, enhancing its versatility and reliability.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and electrical conductivity, ensuring secure connections and reliable performance of the varactor diode in electronic circuits.

Terminal Position: AXIAL

Axial terminal position simplifies alignment and connection of this varactor diode in circuits, making it easier to integrate into various electronic systems.

Case Connection: ISOLATED

Isolated case connection helps prevent electrical interference and ground loops, ensuring stable operation and performance of the varactor diode in complex circuitry.

Maximum Power Dissipation: 0.5 W

High power dissipation capability allows this varactor diode to handle moderate power levels without overheating, ensuring reliable and safe operation in power-intensive applications.

Nominal Diode Capacitance: 6.8 pF

Having a nominal capacitance of 6.8 pF makes this varactor diode suitable for tuning applications in RF circuits, providing the desired capacitance range for frequency control.

Minimum Breakdown Voltage: 110 V

High minimum breakdown voltage rating ensures robust protection against voltage surges and transient events, enhancing the durability and reliability of this varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this component allows for dynamic voltage-controlled tuning in RF circuits, offering flexibility and precision in frequency modulation.

Terminal Form: WIRE

Wire terminal form provides secure connections and easy soldering, facilitating the integration of this varactor diode into electronic assemblies with minimal effort and expertise.

Maximum Repetitive Peak Reverse Voltage: 100 V

High maximum repetitive peak reverse voltage rating ensures that this varactor diode can withstand voltage stress in reverse bias conditions, enhancing its reliability and longevity.

Diode Cap Tolerance: 20 %

Having a capacitance tolerance of 20% allows for some variation in capacitance values, providing flexibility in circuit design and tuning applications using this varactor diode.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability, making this varactor diode suitable for long-term use in precision RF and tuning applications.

Minimum Diode Capacitance Ratio: 2.4

Having a minimum capacitance ratio of 2.4 allows this varactor diode to achieve wide tuning range and frequency variability, making it versatile and adaptable to different circuit requirements.

Technical Specifications

Varactor Diodes 1N4801 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

110 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.4

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

100 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4801 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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