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1N4813

Onsemi

1N4813 by Onsemi

1N4813 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.005 uA, and Nominal Diode Capacitance of 68 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in communication systems.

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1k+

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Vyrian

USA . 264 parts In-Stock

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TANS Electronics

Latvia . 8,207 parts In-Stock

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Problanco Electronics

Mexico . 5,385 parts In-Stock

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Kulean Microsystems

USA . 5,291 parts In-Stock

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Corphita

USA . 2,220 parts In-Stock

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Northwest PG Solutions

USA . 1,545 parts In-Stock

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Native Components

USA . 859 parts In-Stock

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SupplyDigital Components

Austria . 681 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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South Africa . 57 parts In-Stock

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Overview

Enhance your electronic designs with the 1N4813 Varactor Diode by Onsemi. With a minimum quality factor of 15 and a maximum reverse current of 0.005uA, this diode offers superior performance. Ideal for applications requiring variable capacitance, this diode is perfect for voltage-controlled oscillators, frequency multiplication circuits, and phase-locked loops. Trust in the quality and reliability of Onsemi as you experience the value and benefits that the 1N4813 brings to your projects. Upgrade your designs today with this high-quality component.

Feature Benefit Bullets

Minimum Quality Factor: 15

Having a minimum quality factor of 15 ensures that the varactor diode has high efficiency and low loss, making it a reliable choice for applications requiring stable and precise tuning.

Package Body Material: GLASS

The use of glass as the package body material provides excellent protection against environmental factors and ensures durability, making the varactor diode suitable for a wide range of operating conditions.

Config: SINGLE

The single configuration simplifies the design and integration process, making the varactor diode easy to use and cost-effective for various applications.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification ensures sharp and precise changes in capacitance with voltage, allowing for accurate tuning and modulation in electronic circuits.

Maximum Reverse Current: 0.005 uA

With a low maximum reverse current, the varactor diode offers excellent performance in reverse bias conditions, minimizing leakage and ensuring reliable operation.

Package Shape: ROUND

The round package shape offers compactness and ease of mounting, making the varactor diode suitable for space-constrained applications.

Reverse Test Voltage: 30 V

The high reverse test voltage of 30 V ensures the varactor diode can withstand reverse bias conditions without breakdown, enhancing its reliability and longevity.

No. of Terminals: 2

Having 2 terminals simplifies the circuit connection process and makes the varactor diode easy to integrate into electronic designs.

Package Style (Meter): LONG FORM

The long form package style offers versatility and flexibility in mounting options, making the varactor diode suitable for a variety of applications and installations.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the varactor diode can withstand elevated temperatures and harsh operating environments, ensuring reliable performance in demanding conditions.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C allows the varactor diode to function efficiently in cold environments without compromising its performance.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and resistance to corrosion, ensuring reliable electrical connections and longevity of the varactor diode.

Terminal Position: AXIAL

The axial terminal position simplifies the installation and connection process, making the varactor diode easy to integrate into various electronic circuits and systems.

Case Connection: ISOLATED

The isolated case connection enhances the electrical insulation and reliability of the varactor diode, making it a safe and dependable choice for circuit applications.

Maximum Power Dissipation: 0.5 W

With a maximum power dissipation of 0.5 W, the varactor diode can handle higher power levels without overheating, ensuring stable and efficient performance in power-sensitive applications.

Nominal Diode Capacitance: 68 pF

The nominal diode capacitance of 68 pF provides the desired capacitance value for tuning and modulation applications, making the varactor diode a versatile choice for various circuit designs.

Minimum Breakdown Voltage: 33 V

The minimum breakdown voltage of 33 V ensures the varactor diode can withstand high voltage conditions without breakdown, ensuring reliable and safe operation in voltage-sensitive applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers the capability to change its capacitance with an applied voltage, allowing for frequency tuning and modulation in electronic circuits.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and ensures a secure electrical connection, making the varactor diode easy to install and integrate into circuit designs.

Maximum Repetitive Peak Reverse Voltage: 15 V

With a maximum repetitive peak reverse voltage of 15 V, the varactor diode can handle reverse voltage spikes without damage, ensuring long-term reliability in variable voltage applications.

Diode Cap Tolerance: 20 %

The 20% diode capacitance tolerance provides manufacturing flexibility and ensures consistent performance in a range of operating conditions, making the varactor diode a reliable component for circuit designs.

Diode Element Material: SILICON

The use of silicon as the diode element material offers excellent performance and reliability, making the varactor diode suitable for a wide range of electronic applications.

Minimum Diode Capacitance Ratio: 2.3

The minimum diode capacitance ratio of 2.3 ensures the varactor diode can provide the desired capacitance change with voltage, allowing for precise tuning and modulation in electronic circuits.

Technical Specifications

Varactor Diodes 1N4813 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

33 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.3

Nominal Diode Capacitance:

68 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

15 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4813 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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