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BB911-AMMOPAK

NXP Semiconductors

BB911-AMMOPAK by NXP Semiconductors

BB911-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 4,391 parts In-Stock

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Digiode

USA . 3,429 parts In-Stock

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Anansix

USA . 688 parts In-Stock

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688

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One Stop Electronics

USA . 476 parts In-Stock

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$0.010

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476

$0.010

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Native Components

USA . 515 parts In-Stock

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$18.435

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515

$18.435

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Northwest PG Solutions

USA . 916 parts In-Stock

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$20.278

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$18.251

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916

$20.278

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UNI Independent Distributors

Spain . 6,224 parts In-Stock

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Corphita

USA . 1,985 parts In-Stock

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Overview

Unlock the potential of your designs with the BB911-AMMOPAK from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers this exceptional varactor diode tailored for very high frequency applications. With its glass construction and isolated case connection, it ensures reliability and durability in demanding environments. Elevate your projects with a component that offers unmatched performance and stability, driving efficiency and excellence.

Feature Benefit Bullets

Package Body Material: GLASS

The glass body provides excellent insulation and durability, making this varactor diode suitable for high-frequency applications.

Config: SINGLE

A single configuration allows for straightforward integration into circuit designs, enhancing ease of use in various applications.

Frequency Band: VERY HIGH FREQUENCY

Operational in very high frequency, this diode is ideal for RF and microwave applications, ensuring superior performance in these domains.

Maximum Reverse Current: 0.01 uA

With a minimal reverse current, this diode helps in reducing power loss and improving overall circuit efficiency.

Package Shape: ROUND

The round package shape allows for flexible mounting options in various designs while maintaining compactness.

Reverse Test Voltage: 28 V

A higher reverse test voltage increases reliability under stress, making this diode suitable for rugged environments.

No. of Terminals: 2

Having only two terminals simplifies circuit layout and minimizes potential points of failure.

Package Style (Meter): LONG FORM

The long form package style enhances stability and ease of handling during installation, suited for automated assembly processes.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C enables the diode to operate effectively in high-temperature environments without failure.

Terminal Position: AXIAL

The axial terminal design facilitates efficient conduction and thermal management, making it advantageous for various applications.

Case Connection: ISOLATED

The isolated case connection reduces the risk of short circuits, increasing safety during operation.

Minimum Breakdown Voltage: 32 V

A minimum breakdown voltage of 32 V provides additional safety margin, ensuring reliable operation in high-stress conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for adjustable capacitance, making it ideal for tuning applications in RF circuits.

Terminal Form: WIRE

Wire terminals enhance versatility in mounting options, allowing for easy adaptation in various designs.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent performance and reliability, making it a standard choice for high-frequency applications.

Minimum Diode Capacitance Ratio: 21

A minimum capacitance ratio of 21 offers significant tuning capability, essential for applications requiring precise frequency adjustments.

Technical Specifications

Varactor Diodes BB911-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

21

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB911-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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