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BB910-AMMOPAK

NXP Semiconductors

BB910-AMMOPAK by NXP Semiconductors

BB910-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high to ultra-high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a min breakdown voltage of 32 V. Ideal for tuning circuits and RF applications, its isolated case connection ensures reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,145 parts In-Stock

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Anansix

USA . 2,125 parts In-Stock

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2,125

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Digiode

USA . 1,879 parts In-Stock

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1,879

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One Stop Electronics

USA . 385 parts In-Stock

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$2.010

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385

$2.010

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Corphita

USA . 3,752 parts In-Stock

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3,752

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Northwest PG Solutions

USA . 1,495 parts In-Stock

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1,495

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UNI Independent Distributors

Spain . 1,112 parts In-Stock

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Native Components

USA . 475 parts In-Stock

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475

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Overview

Unlock exceptional performance with the BB910-AMMOPAK from NXP Semiconductors—a leader in innovative solutions. This high-quality varactor diode excels in very to ultra high frequency applications, ensuring reliability and precision for your projects. With its robust glass package and minimal reverse current, it delivers outstanding value and efficiency, making it ideal for RF tuning circuits, oscillators, and more. Experience the benefits of superior technology that drives your designs forward!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material enhances durability and provides excellent thermal stability, making this varactor diode reliable in challenging environments.

Config: SINGLE

A single configuration simplifies circuit design and integration, making it easier to implement into various applications.

Frequency Band: VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Supporting very high to ultra high frequency ranges, this diode is ideal for RF applications, ensuring good performance in communication systems.

Maximum Reverse Current: 0.01 uA

A low maximum reverse current minimizes leakage and enhances efficiency, making this diode suitable for low-power applications.

Package Shape: ROUND

The round package shape facilitates compatibility with standard mounting practices and provides a compact solution for circuit designers.

Reverse Test Voltage: 28 V

With a reverse test voltage of 28V, this diode can withstand voltage spikes, ensuring robust performance and reliability in demanding conditions.

Number of Terminals: 2

Featuring only 2 terminals, the simplicity of this design can lead to easier soldering and reduced assembly costs.

Package Style (Meter): LONG FORM

The long form of packaging allows for better ease of handling and integration into circuits, making it suitable for various applications.

Maximum Operating Temperature: 100 °C

A high maximum operating temperature allows for use in high-temperature environments, expanding its applicability in various industrial settings.

Terminal Position: AXIAL

Axial terminal positioning is advantageous for through-hole applications, providing better structural stability in PCB mounting.

Case Connection: ISOLATED

An isolated case connection enhances safety and prevents potential short circuits, ensuring a reliable operation in sensitive applications.

Minimum Breakdown Voltage: 32 V

The high minimum breakdown voltage indicates robust performance under stress and reduces the risk of failure in adverse operational conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides tunable capacitance for applications like RF tuning circuits, making it versatile for engineers.

Terminal Form: WIRE

Wire-form terminals offer better flexibility in connection, which can be beneficial for custom circuit designs or prototyping.

Diode Element Material: SILICON

Silicon as the diode element material ensures good electrical characteristics and is widely available, contributing to lower production costs.

Minimum Diode Capacitance Ratio: 14

A minimum diode capacitance ratio of 14 allows for a wide range of capacitance settings, enabling precise tuning in various electronic applications.

Technical Specifications

Varactor Diodes BB910-AMMOPAK attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

Minimum Breakdown Voltage:

32 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

14

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB910-AMMOPAK Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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