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MV2109RL

Onsemi

MV2109RL by Onsemi

MV2109RL by Onsemi is a single varactor diode with a nominal capacitance of 33pF and min breakdown voltage of 30V. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 747 parts In-Stock

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Digiode

USA . 740 parts In-Stock

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740

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TANS Electronics

Latvia . 7,197 parts In-Stock

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Kulean Microsystems

USA . 5,579 parts In-Stock

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UHIMA Technologies

Türkiye . 911 parts In-Stock

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Corphita

USA . 475 parts In-Stock

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Problanco Electronics

Mexico . 351 parts In-Stock

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SupplyDigital Components

Austria . 271 parts In-Stock

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Corohmni

South Africa . 92 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the MV2109RL Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in every product they manufacture. The MV2109RL is perfect for a wide range of applications, offering customers value and benefits such as precise control of capacitance, high power dissipation, and a wide operating temperature range. Experience innovation at its finest with the MV2109RL Varactor Diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance in terms of signal quality and stability, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good protection and durability, making it suitable for various environmental conditions.

Config: SINGLE

Single configuration simplifies circuit design and ensures easy integration, making it a cost-effective option for applications requiring varactor diodes.

Package Shape: ROUND

Round package shape allows for easy mounting and secure placement, enhancing the ease of use and installation of this varactor diode.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and provides a straightforward interface in circuit designs, making it user-friendly.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient heat dissipation and space-saving benefits, making it a practical choice in compact electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without compromising performance, ensuring long-term reliability.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and conductivity, making it easy to install and maintain in electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates efficient PCB layout and soldering, enhancing overall usability and reliability in circuit integration.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle increased power levels without overheating, ensuring stable performance under demanding conditions.

Nominal Diode Capacitance: 33 pF

The nominal capacitance value of 33 pF offers precise tuning capabilities in RF applications, making it a suitable choice for frequency control and modulation.

Minimum Breakdown Voltage: 30 V

Having a minimum breakdown voltage of 30 V ensures reliable operation and protection against voltage surges, making it a durable and long-lasting component in electronic circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance for frequency tuning and modulation applications, providing flexibility and versatility in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for secure and reliable soldering connections, ensuring stability and durability in circuit assembly and maintenance.

Diode Cap Tolerance: 10 %

The 10% capacitance tolerance provides consistency in performance and accurate tuning capabilities, making it a reliable choice for precise frequency control applications.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability in performance, ensuring consistent operation and longevity in electronic circuits.

Minimum Diode Capacitance Ratio: 2.5

Minimum diode capacitance ratio of 2.5 indicates a wide tuning range and flexibility in frequency modulation, making it a versatile and adaptable choice for RF applications.

Technical Specifications

Varactor Diodes MV2109RL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2109RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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