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SVC251SPA

Onsemi

SVC251SPA by Onsemi

SVC251SPA by Onsemi is a single hyperabrupt varactor diode with 23pF nominal capacitance, 12V breakdown voltage, and 1.7 min capacitance ratio. It is used in RF applications for frequency tuning due to its silicon element material and through-hole terminal form.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,700 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

27,700

-

$0.119

$0.099

$0.088

DigiKey

USA . 27,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

27,700

-

-

-

$0.150

Verical

USA . 27,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

27,700

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,109 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

1,109

$0.078

-

-

-

Digiode

USA . 1,000 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.093

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 470 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$0.078

-

-

-

Corphita

USA . 1,755 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

1,755

$0.088

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 29,480 parts In-Stock

1+ parts

-

100+ parts

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29,480

-

-

-

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Continental Prestige Electronics

USA . 27,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.078

10k+ parts

-

27,700

-

-

$0.078

-

TANS Electronics

Latvia . 6,696 parts In-Stock

1+ parts

-

100+ parts

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6,696

-

-

-

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SupplyDigital Components

Austria . 6,596 parts In-Stock

1+ parts

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100+ parts

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6,596

-

-

-

-

Kulean Microsystems

USA . 6,285 parts In-Stock

1+ parts

-

100+ parts

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6,285

-

-

-

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Assy Fe

Spain . 5,700 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,700

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-

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Kepictronics

USA . 3,613 parts In-Stock

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3,613

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-

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Problanco Electronics

Mexico . 3,263 parts In-Stock

1+ parts

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100+ parts

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3,263

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-

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Metaverse IC Inc.

Canada . 2,750 parts In-Stock

1+ parts

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100+ parts

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2,750

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UHIMA Technologies

Türkiye . 121 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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121

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-

Overview

Discover the SVC251SPA by Onsemi, a top-of-the-line Varactor Diode offering unmatched quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With its hyperabrupt classification and 23pF nominal capacitance, the SVC251SPA provides excellent performance and flexibility. Whether you're in telecommunications, industrial electronics, or consumer products, this diode delivers value and efficiency. Trust Onsemi for superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification allows for precise and rapid changes in capacitance, making this diode ideal for high frequency applications.

Package Shape: RECTANGULAR

Rectangular shape provides ease of mounting and integration into circuit designs.

Nominal Diode Capacitance: 23 pF

The nominal capacitance of 23 pF makes this diode suitable for a wide range of applications requiring variable capacitance.

Minimum Breakdown Voltage: 12 V

A minimum breakdown voltage of 12 V offers protection against voltage surges and ensures the diode operates safely within its specified range.

Diode Element Material: SILICON

Silicon material provides stability and reliability for the diode, ensuring consistent performance over time.

Technical Specifications

Varactor Diodes SVC251SPA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

12 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

1.7

Nominal Diode Capacitance:

23 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVC251SPA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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