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SVC203CP

Onsemi

SVC203CP by Onsemi

The Onsemi SVC203CP is a Varactor Diode with 2 elements, offering a min Quality Factor of 60 and a Nominal Capacitance of 62.39 pF. Commonly used in RF applications, it features a Max Operating Temperature of 125 °C and Gull Wing terminals for surface mount assembly.

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USA . 1,901 parts In-Stock

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USA . 2,420 parts In-Stock

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TANS Electronics

Latvia . 2,031 parts In-Stock

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Kulean Microsystems

USA . 1,971 parts In-Stock

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Corphita

USA . 376 parts In-Stock

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Problanco Electronics

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Corohmni

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SupplyDigital Components

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Overview

Experience unparalleled quality and performance with the SVC203CP Varactor Diode by Onsemi. With a minimum Quality Factor of 60 and a Nominal Diode Capacitance of 62.39 pF, this small outline package offers common cathode configuration with 2 elements, perfect for a wide range of applications. From RF tuning to frequency control, this diode's variable capacitance and high breakdown voltage of 16V deliver exceptional value and benefits to customers seeking precision and reliability in their designs. Trust Onsemi for cutting-edge technology that empowers innovation.

Feature Benefit Bullets

Minimum Quality Factor: 60

Higher quality factor indicates better performance and efficiency in RF circuits.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the varactor diodes.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for better voltage handling and functionality.

Surface Mount: YES

Surface mount capability makes installation easier and more convenient.

Package Shape: RECTANGULAR

Rectangular shape enables efficient placement and integration in circuits.

No. of Terminals: 3

3 terminals provide a secure and stable connection for the varactor diodes.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in various environments.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections.

Nominal Diode Capacitance: 62.39 pF

Optimal diode capacitance value for effective signal processing and tuning.

Minimum Breakdown Voltage: 16 V

Sufficient minimum breakdown voltage for protecting the diodes from voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance, providing versatility in circuit design.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and mounting of the varactor diodes.

No. of Elements: 2

Having 2 elements allows for enhanced performance and functionality in circuits.

Maximum Repetitive Peak Reverse Voltage: 16 V

High maximum repetitive peak reverse voltage ensures protection against reverse voltage polarity.

Diode Cap Tolerance: 5.51 %

Low diode capacitance tolerance ensures accurate and stable performance in circuits.

Diode Element Material: SILICON

Silicon material for the diode elements offers reliability and stability in operation.

Minimum Diode Capacitance Ratio: 4.6

Higher minimum diode capacitance ratio provides greater range for capacitance adjustment in circuits.

Technical Specifications

Varactor Diodes SVC203CP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

5.51 %

Minimum Diode Capacitance Ratio:

4.6

Nominal Diode Capacitance:

62.39 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

60

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC203CP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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