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SVC203C

Onsemi

SVC203C by Onsemi

The Onsemi SVC203C is a Varactor Diode with 2 elements, offering a min Quality Factor of 60 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, with a Max Reverse Current of 0.05 uA. Ideal for applications requiring precise capacitance control in high-frequency circuits.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,106 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 8,212 parts In-Stock

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Problanco Electronics

Mexico . 7,671 parts In-Stock

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SupplyDigital Components

Austria . 4,231 parts In-Stock

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TANS Electronics

Latvia . 1,196 parts In-Stock

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Corphita

USA . 864 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the SVC203C Varactor Diode by Onsemi. Known for its high-quality manufacturing and very high frequency capabilities, this common cathode diode offers precise variable capacitance for optimal performance. Whether you're designing RF amplifiers, voltage-controlled oscillators, or frequency synthesizers, this diode's abrupt classification and small outline package make it a versatile choice. Experience the benefits of reliable operation, low reverse current, and a wide temperature range up to 125 °C. Elevate your designs with the SVC203C and discover the difference quality makes.

Feature Benefit Bullets

Minimum Quality Factor: 60

High quality factor ensures efficient signal transmission and minimal loss, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good protection and durability to the diode, making it suitable for various environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuit designs, providing flexibility and convenience.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance classification indicates precise and sudden capacitance changes, enhancing the diode's performance in frequency modulation applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency bands, this varactor diode is ideal for applications requiring fast switching and high data transmission rates.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient installation on PCBs, making the varactor diode suitable for compact electronic devices.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures minimal power loss and efficient performance of the varactor diode in reverse bias conditions.

Package Shape: RECTANGULAR

Rectangular package shape provides easy handling and installation, allowing for precise placement in circuit layouts.

Reverse Test Voltage: 10 V

High reverse test voltage capability of 10 V ensures reliable and stable operation of the varactor diode even under reverse bias conditions.

No. of Terminals: 3

Three terminals offer flexibility in circuit connection and allow for versatile integration into different electronic systems.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and enables compact design layouts, making this varactor diode suitable for miniaturized devices.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C ensures stable performance even in elevated temperature environments, enhancing the diode's reliability.

Terminal Position: DUAL

Dual terminal position allows for easy connection and integration into circuit designs, facilitating efficient signal transmission.

Nominal Diode Capacitance: 62.39 pF

Nominal capacitance value of 62.39 pF indicates precise and consistent capacitance characteristics, ensuring accurate performance in frequency modulation applications.

Minimum Breakdown Voltage: 16 V

High minimum breakdown voltage of 16 V ensures reliable operation and protection against voltage spikes, making this varactor diode suitable for demanding applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance values, enabling fine-tuning and optimization of signal processing in electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections, ensuring stable performance of the varactor diode in various electronic systems.

No. of Elements: 2

Two elements offer dual functionality and enhanced performance in signal modulation applications, providing versatility and efficiency.

Maximum Repetitive Peak Reverse Voltage: 16 V

High maximum repetitive peak reverse voltage of 16 V ensures reliable and stable operation of the diode in reverse bias conditions, enhancing its durability.

Diode Cap Tolerance: 5.75 %

Capacitance tolerance of 5.75% indicates precise and consistent capacitance values, allowing for accurate signal processing in electronic circuits.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and durability, making this varactor diode suitable for long-term use in diverse applications.

Minimum Diode Capacitance Ratio: 4.6

Minimum capacitance ratio of 4.6 ensures stable performance and consistent capacitance values, providing reliable signal processing capabilities in electronic circuits.

Technical Specifications

Varactor Diodes SVC203C attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

5.75 %

Minimum Diode Capacitance Ratio:

4.6

Nominal Diode Capacitance:

62.39 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Minimum Quality Factor:

60

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

SVC203C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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