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SVC236

Onsemi

SVC236 by Onsemi

SVC236 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 70 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, has a Max Reverse Current of 0.05 uA, and is suitable for applications requiring high-frequency signal modulation.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,423 parts In-Stock

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Digiode

USA . 1,240 parts In-Stock

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LittleDiode

UK . 12 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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SupplyDigital Components

Austria . 5,411 parts In-Stock

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Problanco Electronics

Mexico . 5,063 parts In-Stock

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TANS Electronics

Latvia . 2,988 parts In-Stock

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Corphita

USA . 2,246 parts In-Stock

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Kulean Microsystems

USA . 1,678 parts In-Stock

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UHIMA Technologies

Türkiye . 624 parts In-Stock

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Corohmni

South Africa . 255 parts In-Stock

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Overview

Discover the SVC236 by Onsemi, a high-quality Varactor Diode designed for very high frequency applications. With a minimum quality factor of 70 and a nominal capacitance of 97.095 pF, this diode offers precise tuning capabilities for a wide range of electronic devices. Manufactured by Onsemi, a trusted name in the industry, you can count on the reliability and performance of the SVC236. Whether you're working on RF amplifiers, voltage-controlled oscillators, or frequency modulators, this diode's common cathode configuration and dual terminal position make it a versatile and efficient choice. Upgrade your projects with the SVC236 and experience the difference in quality and precision that Onsemi delivers.

Feature Benefit Bullets

Minimum Quality Factor: 70

Higher quality factor indicates better performance and efficiency in the circuit.

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the diode.

Frequency Band: VERY HIGH FREQUENCY

Suitable for applications requiring very high frequencies, providing reliable performance.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Maximum Reverse Current: 0.05 uA

Low reverse current minimizes power loss and ensures stability.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for various operating conditions.

Nominal Diode Capacitance: 97.095 pF

Provides the desired capacitance for specific applications.

Minimum Breakdown Voltage: 16 V

Higher breakdown voltage ensures protection against voltage spikes.

No. of Elements: 2

Having 2 elements can provide more flexibility in circuit design.

Technical Specifications

Varactor Diodes SVC236 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

97.095 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Minimum Quality Factor:

70

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

SVC236 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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