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MMVL3102T1G

Onsemi

MMVL3102T1G by Onsemi

MMVL3102T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

12,000

-

$0.132

$0.110

$0.098

Verical

USA . 12,000 parts In-Stock

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-

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$0.122

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$0.122

Distributors (In-Stock)

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Digiode

USA . 1,443 parts In-Stock

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$0.103

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1,443

$0.103

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Vyrian

USA . 5,254 parts In-Stock

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5,254

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Distributors (Availability)

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Corohmni

South Africa . 96 parts In-Stock

1+ parts

$0.096

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96

$0.096

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Corphita

USA . 989 parts In-Stock

1+ parts

$0.097

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989

$0.097

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AZTECH Wire

Italy . 1,201 parts In-Stock

1+ parts

$12.390

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1,201

$12.390

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Continental Prestige Electronics

USA . 12,000 parts In-Stock

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$0.096

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$0.096

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SupplyDigital Components

Austria . 6,827 parts In-Stock

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TANS Electronics

Latvia . 5,045 parts In-Stock

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Kulean Microsystems

USA . 942 parts In-Stock

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UHIMA Technologies

Türkiye . 930 parts In-Stock

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Problanco Electronics

Mexico . 136 parts In-Stock

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Overview

Discover the MMVL3102T1G by Onsemi, a top-quality varactor diode designed for very high-frequency applications. With a minimum quality factor of 200 and a small outline package style, this diode offers exceptional performance and reliability. Its variable capacitance design allows for precise tuning, making it ideal for frequency modulation, phase-locked loops, and voltage-controlled oscillators. Trust in Onsemi's reputation for excellence and choose the MMVL3102T1G for superior value and unmatched benefits in your electronic projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures stable and reliable performance in very high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides durability and protection for the varactor diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, making it suitable for advanced communication systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy mounting and placement on a circuit board.

No. of Terminals: 2

Two terminals provide simple and straightforward connection to the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and is ideal for compact electronic devices.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options.

Maximum Power Dissipation: 0.2 W

High power dissipation capability allows the varactor diode to handle a range of power levels.

Nominal Diode Capacitance: 22 pF

Nominal capacitance value is suitable for tuning and frequency control applications.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage ensures reliable operation even under high voltage conditions.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, making it suitable for soldering processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C allows for efficient and reliable soldering.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning and frequency control in electronic circuits.

Terminal Form: GULL WING

Gull wing terminal form provides easy and secure soldering onto the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage rating ensures protection against reverse voltage.

Diode Cap Tolerance: 11.11%

Tight capacitance tolerance of 11.11% ensures accurate and precise tuning capability.

Diode Element Material: SILICON

Silicon diode element material offers high stability and efficiency in operation.

Minimum Diode Capacitance Ratio: 4.5

Minimum capacitance ratio of 4.5 allows for a wide range of capacitance values for tuning purposes.

Technical Specifications

Varactor Diodes MMVL3102T1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

11.11 %

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMVL3102T1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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