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MV1405

Onsemi

MV1405 by Onsemi

MV1405 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, nominal capacitance of 250 pF, and min breakdown voltage of 12 V. It is commonly used in RF applications for frequency tuning in communication systems due to its high capacitance ratio and low power dissipation capabilities.

Median Price

$41.480

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 389 parts In-Stock

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$41.480

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$33.600

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Digiode

USA . 1,312 parts In-Stock

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$39.406

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Vyrian

USA . 3,415 parts In-Stock

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LWI Electronics Inc

India . 44 parts In-Stock

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Quantum Digital Technology

USA . 6 parts In-Stock

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EMSNET

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Resion

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Corphita

USA . 419 parts In-Stock

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$37.332

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Corohmni

South Africa . 480 parts In-Stock

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SupplyDigital Components

Austria . 6,276 parts In-Stock

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TANS Electronics

Latvia . 5,986 parts In-Stock

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Problanco Electronics

Mexico . 4,378 parts In-Stock

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Kulean Microsystems

USA . 4,121 parts In-Stock

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Perfect Parts

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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Overview

Unlock the power of innovation with the MV1405 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. The MV1405, a Varactor Diode, offers a minimum Quality Factor of 200 and a Hyperabrupt Variable Capacitance Diode Classification. Perfect for a range of applications, this product provides exceptional value and benefits to customers. Embrace the advantages of the MV1405 and elevate your projects to new heights.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and reliability in the circuit, making this varactor diode a great choice for high frequency applications.

Package Body Material: GLASS

Glass material ensures durability and stability, making it suitable for demanding environments and prolonged usage.

Config: SINGLE

Single configuration allows for easy integration into circuits and simplifies design complexities.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification ensures precise and rapid capacitance changes, making it ideal for frequency tuning and modulation applications.

Package Shape: ROUND

Round package shape ensures uniform distribution of stresses and better thermal management, enhancing overall performance.

No. of Terminals: 2

2-terminal design offers simplicity and ease of use in circuit connections.

Package Style (Meter): LONG FORM

Long form package style provides added flexibility in circuit layout and offers better heat dissipation capabilities.

Terminal Position: AXIAL

Axial terminal position enables straightforward and secure placement within the circuit.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and crosstalk, ensuring signal integrity.

Maximum Power Dissipation: 0.4 W

With a high maximum power dissipation rating, this varactor diode can handle higher power loads without risking damage.

Nominal Diode Capacitance: 250 pF

Nominal capacitance of 250 pF offers a good balance between high-frequency performance and tuning range.

Minimum Breakdown Voltage: 12 V

A minimum breakdown voltage of 12 V ensures reliable operation and protection against voltage spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Designed specifically for variable capacitance applications, providing precise and stable tuning capabilities.

Terminal Form: WIRE

Wire terminal form allows for soldering or connection flexibility, making installation easier.

Diode Cap Tolerance: 20 %

A diode capacitance tolerance of 20% ensures consistent performance and compatibility in a variety of circuit designs.

Diode Element Material: SILICON

Silicon material offers stability, reliability, and high temperature tolerance, making it an excellent choice for electronic components.

Minimum Diode Capacitance Ratio: 10

Minimum capacitance ratio of 10 provides a wide tuning range, making it suitable for various frequency modulation applications.

Technical Specifications

Varactor Diodes MV1405 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

12 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

10

Nominal Diode Capacitance:

250 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MV1405 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-032-0468, 5961010320468

NIIN

010320468

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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