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1N5475

Onsemi

1N5475 by Onsemi

1N5475 by Onsemi is a varactor diode with 82pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

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1k+

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Digiode

USA . 2,218 parts In-Stock

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Vyrian

USA . 2,098 parts In-Stock

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Native Components

USA . 784 parts In-Stock

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Northwest PG Solutions

USA . 1,460 parts In-Stock

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SupplyDigital Components

Austria . 8,312 parts In-Stock

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Kulean Microsystems

USA . 5,194 parts In-Stock

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Problanco Electronics

Mexico . 3,985 parts In-Stock

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Corphita

USA . 2,491 parts In-Stock

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TANS Electronics

Latvia . 1,689 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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Overview

Elevate your electronic designs with the 1N5475 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. The 1N5475 is a versatile diode perfect for applications requiring variable capacitance, such as frequency tuning and voltage-controlled oscillators. Experience unmatched performance and precision with this diode's high-quality construction and seamless operation. Upgrade your projects today with the Onsemi 1N5475 for unrivaled value and efficiency.

Feature Benefit Bullets

Minimum Quality Factor: 225

High quality factor ensures stable performance and efficient signal processing.

Package Body Material: GLASS

Glass packaging provides durability and resistance to environmental factors.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification allows for precise control and rapid response in variable capacitance applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power consumption and ensures signal integrity.

Package Shape: ROUND

Round shape facilitates easy mounting and integration into circuits.

Reverse Test Voltage: 25 V

Sufficient reverse test voltage for reliable operation and accurate testing.

No. of Terminals: 2

Simple two-terminal design for straightforward connectivity.

Package Style (Meter): LONG FORM

Long form packaging allows for easy handling and identification during installation.

Maximum Operating Temperature: 175 °C

Wide temperature range ensures operational reliability in various environments.

Minimum Operating Temperature: -65 °C

Suitable for use in both high and low temperature conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides corrosion resistance and enhances solderability.

Terminal Position: AXIAL

Axial terminal position for convenient mounting and connection.

Case Connection: ISOLATED

Isolated case connection for electrical safety and protection.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for efficient operation in demanding applications.

Nominal Diode Capacitance: 82 pF

Optimal capacitance for versatile performance in various electronic circuits.

Minimum Breakdown Voltage: 30 V

High breakdown voltage prevents damage from overvoltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode for precise tuning and control in RF and microwave applications.

Terminal Form: WIRE

Wire terminal form for easy connection and flexibility in mounting.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable for applications requiring repetitive peak reverse voltage protection.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance for accurate and consistent performance.

Diode Element Material: SILICON

Silicon diode element material for reliable and stable electrical properties.

Minimum Diode Capacitance Ratio: 2.9

High minimum capacitance ratio provides flexibility and control in tuning applications.

Technical Specifications

Varactor Diodes 1N5475 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

82 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

225

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5475 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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