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1N5448ARL

Onsemi

1N5448ARL by Onsemi

1N5448ARL by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Nominal Capacitance of 22 pF, and Breakdown Voltage of 30 V. Ideal for Ultra High Frequency applications due to its Abrupt Variable Capacitance Diode Classification and 0.4 W Power Dissipation capability.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Anansix

USA . 2,711 parts In-Stock

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Vyrian

USA . 2,121 parts In-Stock

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Digiode

USA . 904 parts In-Stock

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Northwest PG Solutions

USA . 1,358 parts In-Stock

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$2.722

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SupplyDigital Components

Austria . 6,081 parts In-Stock

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TANS Electronics

Latvia . 5,756 parts In-Stock

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Problanco Electronics

Mexico . 5,066 parts In-Stock

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Corphita

USA . 1,139 parts In-Stock

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Kulean Microsystems

USA . 895 parts In-Stock

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Native Components

USA . 570 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 40 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the 1N5448ARL Varactor Diode by Onsemi. Crafted with precision and quality in mind, this diode offers ultra-high frequency capabilities and a minimum quality factor of 350. Perfect for applications requiring variable capacitance, this diode provides smooth and reliable performance, ensuring optimal functionality. Upgrade your projects with the superior technology of Onsemi and experience the difference in quality and efficiency.

Feature Benefit Bullets

Minimum Quality Factor: 350

Higher quality factor means less loss in the circuit, leading to improved signal strength and performance.

Package Body Material: GLASS

Glass packaging provides better protection and stability for the diode, ensuring long-term reliability.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance allows for precise frequency tuning, making it ideal for applications requiring high frequency accuracy.

Frequency Band: ULTRA HIGH FREQUENCY

Specifically designed for ultra high frequency applications, providing optimal performance in this frequency range.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits, enhancing ease of use.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and makes it easier to incorporate into circuits.

Package Style (Meter): LONG FORM

Long form package style provides more surface area for heat dissipation, allowing for higher power handling capacity.

Terminal Position: AXIAL

Axial terminal position makes it easy to connect the diode in a circuit, ensuring proper placement and functionality.

Case Connection: ISOLATED

Isolated case connection prevents interference and crosstalk, ensuring stable operation in high frequency applications.

Maximum Power Dissipation: 0.4 W

Higher power dissipation capability allows for handling more power without overheating, improving overall reliability.

Nominal Diode Capacitance: 22 pF

Optimal capacitance value for a wide range of applications, providing flexibility and versatility in circuit design.

Minimum Breakdown Voltage: 30 V

Higher breakdown voltage ensures the diode can withstand higher voltages without failing, improving overall durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for precise tuning of capacitance, making it suitable for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form makes it easy to connect and solder the diode in a circuit, ensuring secure and stable connections.

Diode Cap Tolerance: 10 %

Higher capacitance tolerance allows for better matching in circuits, improving overall performance and accuracy.

Diode Element Material: SILICON

Silicon diode material provides high performance and reliability, making it suitable for a wide range of applications.

Minimum Diode Capacitance Ratio: 2.6

Higher capacitance ratio allows for greater tuning range, providing more flexibility in frequency modulation and tuning applications.

Technical Specifications

Varactor Diodes 1N5448ARL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Surface Mount:

NO

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5448ARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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