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1N5441

Onsemi

1N5441 by Onsemi

1N5441 by Onsemi is a varactor diode with a min quality factor of 450, abrupt variable capacitance classification, and max reverse current of 0.00000002 uA. It is used in applications requiring precise voltage control such as RF tuning circuits and frequency modulators.

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Native Components

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Northwest PG Solutions

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RGB Technical Solutions

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SupplyDigital Components

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Problanco Electronics

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UHIMA Technologies

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Overview

Unlock limitless possibilities with the 1N5441 Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers superior quality and reliability. Ideal for applications in RF tuning, frequency modulation, and signal processing, this diode provides unmatched performance and efficiency. Experience seamless integration and enhanced functionality with the 1N5441, delivering value and benefits that exceed expectations. Elevate your projects with the Onsemi advantage today.

Feature Benefit Bullets

Minimum Quality Factor: 450

A higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for various applications.

Package Body Material: GLASS

Glass package body provides good thermal performance and protection, ensuring durability and stability of the diode.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to use in various electronic projects.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and quick capacitance changes, allowing for efficient signal tuning and modulation.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved overall performance of the diode.

Package Shape: ROUND

Round package shape provides compatibility with standard mounting options and simplifies integration into circuits.

Reverse Test Voltage: 25 V

The high reverse test voltage capacity ensures reliable operation and protection against voltage spikes or transients.

No. of Terminals: 2

Two terminals simplify connection and integration, making this diode suitable for various electronic applications.

Package Style (Meter): LONG FORM

Long form package style allows for easy identification and handling during installation and maintenance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in harsh environments or applications requiring elevated temperatures.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature range allows for use in diverse environments, including cold temperatures without compromising performance.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliability, ensuring secure connections in electronic circuits.

Terminal Position: AXIAL

Axial terminal position simplifies installation and alignment, making it easier to integrate into various circuit designs.

Case Connection: ISOLATED

Isolated case connection enhances shock and vibration resistance, increasing the durability and reliability of the diode.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation rating allows for handling of higher power levels without risk of damage or performance degradation.

Nominal Diode Capacitance: 6.8 pF

Nominal capacitance value ensures precise tuning capabilities and compatibility with various frequency modulation applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures protection against voltage surges or overloads, enhancing the reliability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers flexibility in signal modulation and tuning applications, making it a versatile choice for electronic projects.

Terminal Form: WIRE

Wire terminal form simplifies connection and compatibility with standard wire harnesses or connectors, enhancing ease of use and integration.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage capacity ensures reliable operation and protection against voltage spikes or transients.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for precise tuning and modulation capabilities, ensuring accurate signal processing in electronic circuits.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and performance, making it a reliable choice for various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 ensures reliable and stable capacitance changes, allowing for precise tuning and modulation in electronic circuits.

Technical Specifications

Varactor Diodes 1N5441 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5441 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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