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1N5446ARL

Onsemi

1N5446ARL by Onsemi

1N5446ARL by Onsemi is a varactor diode with a min quality factor of 350, nominal capacitance of 18 pF, and breakdown voltage of 30 V. It is ideal for ultra high frequency applications requiring abrupt variable capacitance diodes in isolated axial package style.

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Digiode

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Anansix

USA . 1,493 parts In-Stock

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Vyrian

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Native Components

USA . 672 parts In-Stock

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Kulean Microsystems

USA . 4,626 parts In-Stock

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TANS Electronics

Latvia . 4,125 parts In-Stock

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SupplyDigital Components

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Northwest PG Solutions

USA . 2,220 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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Overview

Experience the superior quality and performance of the 1N5446ARL Varactor Diode by Onsemi. With a minimum quality factor of 350 and ultra-high frequency capabilities, this diode is perfect for applications requiring precise capacitance control. The single configuration and isolated case connection make installation easy and efficient. Trust in Onsemi's reputation for excellence in semiconductor manufacturing, and discover the value and benefits this diode brings to your projects. Upgrade your designs with the 1N5446ARL and experience unmatched reliability and performance.

Feature Benefit Bullets

Minimum Quality Factor: 350

Higher quality factor ensures better performance and stability in high frequency applications.

Package Body Material: GLASS

Glass package provides durability and protection for the diode component.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance ensures precise control and response in tuning applications.

Frequency Band: ULTRA HIGH FREQUENCY

Suited for applications that require operation in the ultra high frequency range.

Package Shape: ROUND

Round package shape allows for easy mounting and handling.

No. of Terminals: 2

Two terminals simplify connection and compatibility with circuit layouts.

Package Style (Meter): LONG FORM

Long form package style provides flexibility in placement and installation.

Terminal Position: AXIAL

Axial terminal position enables straightforward alignment and connectivity.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures signal integrity.

Maximum Power Dissipation: 0.4 W

Capable of handling power dissipation up to 0.4 W for reliable operation under varying conditions.

Nominal Diode Capacitance: 18 pF

Nominal capacitance of 18 pF offers suitable capacitance for tuning and modulation applications.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage of 30 V provides protection against voltage surges and spikes.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance for frequency tuning.

Terminal Form: WIRE

Wire terminal form simplifies connection and insertion processes.

Diode Cap Tolerance: 10%

Capacitance tolerance of 10% ensures consistent performance and accuracy in tuning.

Diode Element Material: SILICON

Silicon diode element material offers reliability and stability in operation.

Minimum Diode Capacitance Ratio: 2.6

Minimum capacitance ratio of 2.6 provides a wide range of tuning capabilities for different applications.

Technical Specifications

Varactor Diodes 1N5446ARL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Surface Mount:

NO

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5446ARL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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