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MV104RLRA

Onsemi

MV104RLRA by Onsemi

MV104RLRA by Onsemi is a Varactor Diode with a min Quality Factor of 100, Nominal Capacitance of 39.5 pF, and Breakdown Voltage of 32 V. Commonly used in RF applications for frequency tuning due to its Variable Capacitance properties and ABRUPT classification.

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Digiode

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Vyrian

USA . 1,285 parts In-Stock

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Problanco Electronics

Mexico . 7,102 parts In-Stock

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TANS Electronics

Latvia . 6,158 parts In-Stock

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Kulean Microsystems

USA . 3,051 parts In-Stock

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Corphita

USA . 2,133 parts In-Stock

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UHIMA Technologies

Türkiye . 639 parts In-Stock

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SupplyDigital Components

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Corohmni

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Overview

Unlock the potential of your electronic devices with the MV104RLRA Varactor Diode by Onsemi. Crafted with precision and quality, this diode offers a minimum quality factor of 100, ensuring optimal performance. Whether used in tuning circuits or frequency control applications, this common cathode diode with 2 elements delivers reliable results. Trust Onsemi's expertise in semiconductor manufacturing to provide you with a product that exceeds expectations. Upgrade your projects today with the MV104RLRA Varactor Diode and experience the difference in quality and performance.

Feature Benefit Bullets

Minimum Quality Factor: 100

A higher quality factor indicates better performance and efficiency in the circuit, making this varactor diode a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode, ensuring long-term functionality in different environmental conditions.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for versatile use and integration within circuit designs, offering flexibility and ease of application.

Variable Capacitance Diode Classification: ABRUPT

An abrupt variable capacitance diode classification means faster and more precise changes in capacitance, making it suitable for high-frequency applications where rapid adjustments are required.

Package Shape: ROUND

The round package shape provides uniform distribution of stress and facilitates easy mounting, making it convenient for use in various electronic devices.

No. of Terminals: 3

Having 3 terminals offers additional connectivity options and enables more complex circuit configurations, enhancing the versatility of the diode in different setups.

Package Style (Meter): CYLINDRICAL

The cylindrical package style facilitates efficient heat dissipation and allows for easy handling during assembly, ensuring optimal performance and reliability.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, ensuring secure connections within the circuit for stable operation and minimal signal loss.

Terminal Position: BOTTOM

Having the terminal position at the bottom simplifies the installation process and ensures proper alignment in circuit layouts, improving the overall functionality and ease of use.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle higher power levels without overheating or performance degradation, making it suitable for demanding applications.

Nominal Diode Capacitance: 39.5 pF

The nominal diode capacitance value indicates the range of capacitance that can be achieved, allowing for precise tuning and adjustment in various electronic circuits for optimal performance.

Minimum Breakdown Voltage: 32 V

The minimum breakdown voltage of 32V ensures protection against voltage spikes and overloads, safeguarding the diode and other components in the circuit from potential damage.

Peak Reflow Temperature °C: 235

The peak reflow temperature of 235 °C indicates the maximum temperature at which the diode can be safely heated during assembly, ensuring reliable solder joints and long-term durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers adjustable capacitance values for precise tuning and control in various electronic applications, providing versatility and flexibility in circuit design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for secure mounting on circuit boards and ensures reliable connections, making it suitable for applications where stability and durability are essential.

No. of Elements: 2

Having 2 elements provides additional functionality and control over capacitance values, allowing for more precise adjustments in electronic circuits for better performance and optimization.

Maximum Repetitive Peak Reverse Voltage: 32 V

The maximum repetitive peak reverse voltage of 32V ensures reliable operation and protection against reverse voltage conditions, enhancing the durability and lifespan of the diode in various applications.

Diode Cap Tolerance: 6.33 %

The diode capacitance tolerance of 6.33% indicates the range of variation in capacitance values, ensuring consistent performance and accuracy in electronic circuits for reliable operation and precise tuning.

Diode Element Material: SILICON

Being made of silicon, the diode element material offers good thermal stability and reliability, ensuring consistent performance over a wide temperature range and making it suitable for various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates the range of capacitance values that can be achieved, allowing for precise tuning and adjustment in different circuit configurations for optimal performance and operational flexibility.

Technical Specifications

Varactor Diodes MV104RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

1% MATCHING GUARANTEED

Minimum Breakdown Voltage:

32 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

6.33 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

39.5 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

100

Maximum Repetitive Peak Reverse Voltage:

32 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV104RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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