Loading...

MMBV109LT3G

Onsemi

MMBV109LT3G by Onsemi

MMBV109LT3G by Onsemi is a Varactor Diode with a Min Quality Factor of 200, Nominal Capacitance of 29 pF, and Breakdown Voltage of 30 V. Ideal for Very High Frequency applications due to its Variable Capacitance nature and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 11,567 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,567

-

-

-

-

Digiode

USA . 1,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,302

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 237 parts In-Stock

1+ parts

$10.250

100+ parts

-

1k+ parts

-

10k+ parts

-

237

$10.250

-

-

-

Problanco Electronics

Mexico . 7,988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,988

-

-

-

-

TANS Electronics

Latvia . 6,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,339

-

-

-

-

SupplyDigital Components

Austria . 3,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,358

-

-

-

-

Kulean Microsystems

USA . 2,369 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,369

-

-

-

-

Corphita

USA . 1,987 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,987

-

-

-

-

UHIMA Technologies

Türkiye . 610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

610

-

-

-

-

Corohmni

South Africa . 86 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

86

-

-

-

-

Overview

Unlock the potential of your electronic designs with the MMBV109LT3G varactor diode from Onsemi. With a minimum quality factor of 200 and very high frequency capabilities, this diode is perfect for applications requiring precise tuning and frequency control. The small outline package and gull wing terminals make it easy to integrate into your projects, while the high-quality construction ensures reliable performance. Trust Onsemi for superior products that deliver value and innovation to your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures stable performance and better signal efficiency for very high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic systems.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring reliable performance in demanding signal processing tasks.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly and integration, saving time and effort.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and space-saving design, ideal for applications with limited space constraints.

No. of Terminals: 3

Having 3 terminals allows for flexible connectivity options and compatibility with a variety of circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it easy to mount and secure the diode on a PCB, suitable for compact electronic devices.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and solderability, enhancing the overall performance and reliability of the diode.

Terminal Position: DUAL

Dual terminal position provides added flexibility for connecting the diode in different circuit arrangements, improving versatility.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2W, the diode can handle high power levels without overheating, ensuring long-term reliability.

Nominal Diode Capacitance: 29 pF

Nominal capacitance of 29 pF enables precise tuning in variable capacitance applications, allowing for accurate signal processing.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage of 30V provides excellent protection against voltage spikes and ensures safe operation in high voltage environments.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C enables reliable soldering during assembly, contributing to the overall durability and performance of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers adjustable capacitance for precise tuning and optimization in high-frequency circuits, maximizing performance.

Terminal Form: GULL WING

Gull wing terminal form provides secure attachment and reliable connection, enhancing the overall stability and longevity of the diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage of 30V ensures robust protection against reverse voltage conditions, enhancing the diode's durability.

Diode Cap Tolerance: 10.34 %

Capacitance tolerance of 10.34% allows for precise control and adjustment in capacitance values, ensuring accurate performance in variable capacitance applications.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability, making the diode suitable for long-term use in diverse electronic applications.

Minimum Diode Capacitance Ratio: 5

Minimum diode capacitance ratio of 5 provides a wide range of tuning options, allowing for versatile use in different circuit configurations and frequency ranges.

Technical Specifications

Varactor Diodes MMBV109LT3G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

MMBV109LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20