Loading...

1N5708

Onsemi

1N5708 by Onsemi

1N5708 by Onsemi is a varactor diode with 175 min quality factor, 68 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp range: -65 to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,059 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,059

-

-

-

-

Digiode

USA . 327 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

327

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 287 parts In-Stock

1+ parts

$1.696

100+ parts

-

1k+ parts

-

10k+ parts

-

287

$1.696

-

-

-

Northwest PG Solutions

USA . 2,286 parts In-Stock

1+ parts

$1.866

100+ parts

-

1k+ parts

-

10k+ parts

-

2,286

$1.866

-

-

-

TANS Electronics

Latvia . 6,783 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,783

-

-

-

-

Problanco Electronics

Mexico . 6,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,355

-

-

-

-

Kulean Microsystems

USA . 4,651 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,651

-

-

-

-

SupplyDigital Components

Austria . 3,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,956

-

-

-

-

Corphita

USA . 485 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

485

-

-

-

-

UHIMA Technologies

Türkiye . 310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

310

-

-

-

-

Corohmni

South Africa . 179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179

-

-

-

-

Overview

Unleash the power of innovation with the 1N5708 Varactor Diode from Onsemi. Known for their superior quality and reliable performance, Onsemi products are trusted by industry professionals worldwide. The 1N5708 is a game-changer in the field of variable capacitance diodes, offering unmatched benefits such as precise control and high efficiency in applications such as frequency tuning, voltage-controlled oscillators, and phase-locked loops. Experience the value and advantages that this product brings to your projects and elevate your designs to new heights with the 1N5708 Varactor Diode by Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 175

A high minimum quality factor ensures better performance and efficiency in signal processing applications.

Package Body Material: GLASS

Glass packaging provides good insulation and protection for the varactor diode, making it suitable for various environmental conditions.

Config: SINGLE

Single configuration makes the varactor diode easy to implement and integrate in different circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diode classification ensures sharp and precise changes in capacitance, enabling accurate signal tuning.

Maximum Reverse Current: 0.00000002 uA

Low maximum reverse current minimizes power losses and improves the overall efficiency of the circuit.

Package Shape: ROUND

Round package shape provides uniform distribution of stress and allows for easy mounting on circuit boards.

Reverse Test Voltage: 60 V

A high reverse test voltage rating ensures reliability and protection against voltage spikes in the circuit.

No. of Terminals: 2

Having only 2 terminals simplifies the circuit design and makes it easier to connect the varactor diode in different configurations.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and stability for the varactor diode during installation and operation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows the varactor diode to operate reliably in a wide range of temperature conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the varactor diode can be used in cold environments without performance degradation.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and reliability in circuit connections.

Terminal Position: AXIAL

Axial terminal position allows for easy insertion and connection of the varactor diode in a circuit.

Case Connection: ISOLATED

Isolated case connection helps in minimizing crosstalk and interference from other components in the circuit.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation rating allows the varactor diode to handle higher power levels without damage.

Nominal Diode Capacitance: 68 pF

Nominal diode capacitance of 68 pF provides a good balance between capacitance range and frequency response in signal applications.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage ensures protection against voltage surges and overloads in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product allows for precise tuning and adjustment of signal frequencies.

Terminal Form: WIRE

Wire terminal form provides flexibility in connecting the varactor diode to different components and circuits.

Maximum Repetitive Peak Reverse Voltage: 60 V

High maximum repetitive peak reverse voltage rating ensures reliability and protection against reverse voltage conditions.

Diode Cap Tolerance: 20 %

A 20% diode capacitance tolerance allows for some variation in capacitance values while maintaining overall performance.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and reliability in the varactor diode.

Minimum Diode Capacitance Ratio: 3.2

A high minimum diode capacitance ratio of 3.2 allows for significant changes in capacitance value, enabling precise signal adjustment.

Technical Specifications

Varactor Diodes 1N5708 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

68 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

175

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5708 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-430-3689, 5961144303689

NIIN

144303689

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20