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1N5700

Onsemi

1N5700 by Onsemi

1N5700 by Onsemi is a varactor diode with 15pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Lifecycle Status

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Vyrian

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Digiode

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Native Components

USA . 715 parts In-Stock

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Northwest PG Solutions

USA . 1,347 parts In-Stock

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Problanco Electronics

Mexico . 7,632 parts In-Stock

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SupplyDigital Components

Austria . 5,533 parts In-Stock

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TANS Electronics

Latvia . 2,554 parts In-Stock

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Kulean Microsystems

USA . 2,179 parts In-Stock

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Corphita

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Corohmni

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UHIMA Technologies

Türkiye . 82 parts In-Stock

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Overview

Experience superior quality and performance with the Onsemi 1N5700 Varactor Diode. Manufactured by Onsemi, a trusted industry leader known for their cutting-edge technology and reliable products, this diode offers a range of applications including frequency modulation, voltage-controlled oscillators, and phase-locked loops. With a high minimum quality factor of 400 and a maximum reverse current of 0.00000002 uA, this diode provides exceptional value and benefits to customers seeking precision and efficiency in their electronic devices. Discover the advantages of using the 1N5700 for your next project and elevate your designs to new heights.

Feature Benefit Bullets

Minimum Quality Factor: 400

A high quality factor indicates that this Varactor Diode is very efficient at storing and releasing energy, making it suitable for applications where high performance is needed.

Package Body Material: GLASS

The use of glass as the package body material provides excellent protection for the diode internals, ensuring durability and reliability in various operating conditions.

Config: SINGLE

The single configuration simplifies the design and installation process, making this Varactor Diode user-friendly and easy to integrate into electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification indicates a sharp change in capacitance with voltage, which is desirable for applications requiring precise tuning and frequency control.

Maximum Reverse Current: 0.00000002 uA

The extremely low reverse current ensures minimal power loss and improved efficiency in circuit applications.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, enhancing the convenience and usability of this Varactor Diode.

Reverse Test Voltage: 60 V

The high reverse test voltage capability of 60V provides robust protection against reverse voltage conditions, ensuring the longevity and reliability of the diode.

No. of Terminals: 2

Having only two terminals simplifies the wiring process and reduces the chance of error during installation, making this Varactor Diode user-friendly and easy to work with.

Package Style (Meter): LONG FORM

The long form package style offers versatility in mounting options and allows for efficient utilization of board space in electronic devices.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175 °C, this Varactor Diode can withstand harsh environmental conditions and high-temperature applications with ease.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C ensures reliable performance even in extreme cold environments, making this diode suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and ensures a reliable electrical connection, enhancing the overall performance and longevity of the diode.

Terminal Position: AXIAL

The axial terminal position simplifies the mounting process and allows for easy integration into circuit designs, making this Varactor Diode a convenient choice for electronics applications.

Case Connection: ISOLATED

The isolated case connection helps prevent electrical interference and improves the stability and reliability of the diode in various circuit configurations.

Maximum Power Dissipation: 0.4 W

With a high maximum power dissipation of 0.4W, this Varactor Diode can handle high power levels without overheating, ensuring long-term performance and reliability.

Nominal Diode Capacitance: 15 pF

The nominal capacitance value of 15 pF indicates the diode's ability to store and release charge efficiently, making it suitable for applications requiring precise tuning and control.

Minimum Breakdown Voltage: 65 V

The high minimum breakdown voltage of 65V provides reliable protection against voltage surges and ensures the long-term durability and performance of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning and frequency control, making it an ideal choice for applications requiring dynamic capacitance changes.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and allows for easy integration into electronic circuits, enhancing the user-friendliness of this Varactor Diode.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage rating of 60V ensures reliable operation and protection against reverse voltage conditions, making this diode suitable for demanding applications.

Diode Cap Tolerance: 20 %

The 20% capacitance tolerance provides a margin of error in capacitance values, ensuring consistent performance and reliable operation in various circuit conditions.

Diode Element Material: SILICON

The silicon diode element material offers stability and efficiency in charge storage and release, making this Varactor Diode a reliable choice for demanding electronic applications.

Minimum Diode Capacitance Ratio: 2.8

The minimum capacitance ratio of 2.8 indicates the diode's ability to change capacitance efficiently with voltage, making it suitable for applications requiring precise tuning and frequency control.

Technical Specifications

Varactor Diodes 1N5700 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5700 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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