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1N5453

Onsemi

1N5453 by Onsemi

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

Median Price

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Lifecycle Status

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1k+

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ACDS - Activité Composants Distribution Service

France . 2,200 parts In-Stock

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Vyrian

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LittleDiode

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TANS Electronics

Latvia . 6,005 parts In-Stock

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Northwest PG Solutions

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UHIMA Technologies

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Overview

Unlock the power of precision tuning with the 1N5453 Varactor Diode by Onsemi. Crafted with top-notch materials and expertise, this diode offers a minimum quality factor of 200, ensuring optimal performance in applications requiring variable capacitance. From radio frequency tuning to voltage-controlled oscillators, this diode delivers unparalleled reliability and accuracy, making it the go-to choice for engineers looking to elevate their designs. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor indicates good performance in terms of signal handling and frequency response.

Package Body Material: GLASS

Glass packaging provides durability and resistance to environmental factors, ensuring reliability in various conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes offer precise control over capacitance changes, enhancing tuning capabilities.

Maximum Reverse Current: 0.02 uA

Low maximum reverse current reduces power consumption and improves efficiency.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling.

Reverse Test Voltage: 25 V

Sufficient reverse test voltage ensures safe operation and protection against voltage spikes.

No. of Terminals: 2

Simple 2-terminal setup simplifies circuit connections and reduces complexity.

Package Style (Meter): LONG FORM

Long form package style provides ample space for additional components and heat dissipation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding environments.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and electrical conductivity.

Terminal Position: AXIAL

Axial terminal position simplifies PCB layout and integration.

Case Connection: ISOLATED

Isolated case connection helps prevent signal interference and ensures stable operation.

Maximum Power Dissipation: 0.4 W

Low maximum power dissipation helps in reducing heat buildup and improving overall efficiency.

Nominal Diode Capacitance: 56 pF

Optimal nominal diode capacitance for efficient signal tuning and modulation.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures protection against voltage surges and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers flexibility in circuit design and frequency tuning.

Terminal Form: WIRE

Wire terminal form allows for secure and reliable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures durability and reliability under reverse voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides consistent performance and accuracy in signal tuning.

Diode Element Material: SILICON

Silicon diode element material offers good performance characteristics and consistent functionality.

Minimum Diode Capacitance Ratio: 2.6

High minimum diode capacitance ratio provides greater range in capacitance values for tuning and modulation.

Technical Specifications

Varactor Diodes 1N5453 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

56 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5453 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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