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1N5447

Onsemi

1N5447 by Onsemi

1N5447 by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 20 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 1,730 parts In-Stock

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Vyrian

USA . 1,100 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 23 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$0.179

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$0.177

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$0.170

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Native Components

USA . 242 parts In-Stock

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$1.873

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Northwest PG Solutions

USA . 1,679 parts In-Stock

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$2.060

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Problanco Electronics

Mexico . 6,964 parts In-Stock

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TANS Electronics

Latvia . 4,945 parts In-Stock

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SupplyDigital Components

Austria . 3,230 parts In-Stock

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Kulean Microsystems

USA . 3,083 parts In-Stock

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Corphita

USA . 1,540 parts In-Stock

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Corohmni

South Africa . 109 parts In-Stock

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Overview

Unlock precision and efficiency with the 1N5447 Varactor Diode by Onsemi. Crafted with top-tier quality materials and advanced technology, this diode delivers unmatched performance in various applications. From tuning circuits to frequency modulators, this diode offers superior variable capacitance and precise control. Experience the value of seamless connectivity and optimal signal transmission with the 1N5447 Varactor Diode, setting a new standard for reliability and innovation in the industry.

Feature Benefit Bullets

Minimum Quality Factor: 350

High minimum quality factor indicates good performance and stability of the varactor diode in various applications.

Package Body Material: GLASS

Glass material provides excellent protection and insulation for the diode, ensuring reliability and long-term performance.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in different electronic devices.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes offer sharp changes in capacitance with voltage variations, making them suitable for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low maximum reverse current minimizes power loss and improves efficiency in the circuit where the varactor diode is used.

Package Shape: ROUND

Round package shape enables easy mounting and placement of the diode in compact electronic designs.

Reverse Test Voltage: 25 V

Sufficient reverse test voltage allows the diode to withstand voltage spikes and prevent damage in reverse bias conditions.

No. of Terminals: 2

With only two terminals, the diode is easy to connect and integrate into circuit systems.

Package Style (Meter): LONG FORM

Long form package style provides space for necessary components and leads to efficient heat dissipation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures reliability and stability of the diode in challenging environments.

Minimum Operating Temperature: -65 °C

Wide minimum operating temperature range enables the diode to function in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent conductivity and solderability for easy assembly and maintenance.

Terminal Position: AXIAL

Axial terminal position simplifies the installation and connection of the diode in various circuit layouts.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures proper functioning of the diode in complex circuit setups.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability allows the diode to handle higher power levels without overheating.

Nominal Diode Capacitance: 20 pF

Nominal capacitance value enables precise tuning and control of frequency in RF applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage protects the diode from voltage surges and ensures long-term reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diodes offer adjustable capacitance levels, making them ideal for frequency modulation and tuning applications.

Terminal Form: WIRE

Wire terminal form simplifies the connection and soldering process, enhancing the diode's usability in different electronic setups.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures the diode's durability and reliability in reversing polarity conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for minor variations without affecting the diode's overall performance.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and stability in various operating conditions.

Minimum Diode Capacitance Ratio: 2.6

High minimum diode capacitance ratio provides a wide range of capacitance values for frequency tuning and modulation applications.

Technical Specifications

Varactor Diodes 1N5447 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

20 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5447 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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