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1N5445

Onsemi

1N5445 by Onsemi

1N5445 by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Max Reverse Current of 0.02 uA, and Nominal Diode Capacitance of 15 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Digiode

USA . 1,064 parts In-Stock

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ECAB

Sweden . 244 parts In-Stock

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Vyrian

USA . 110 parts In-Stock

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Electronic Expediters

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Kulean Microsystems

USA . 7,625 parts In-Stock

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SupplyDigital Components

Austria . 2,278 parts In-Stock

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TANS Electronics

Latvia . 1,740 parts In-Stock

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Northwest PG Solutions

USA . 1,585 parts In-Stock

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Problanco Electronics

Mexico . 890 parts In-Stock

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Native Components

USA . 799 parts In-Stock

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Corphita

USA . 692 parts In-Stock

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Corohmni

South Africa . 409 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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Overview

Elevate your electronics with the 1N5445 Varactor Diode by Onsemi. With a minimum quality factor of 400 and a single configuration, this diode offers precise control and reliable performance. Whether you're working on RF amplifiers, voltage-controlled oscillators, or frequency modulators, this diode's variable capacitance and abrupt classification ensure exceptional results. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the full potential of your designs with the 1N5445 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures efficient performance and minimal signal loss, making this varactor diode a reliable choice for various applications.

Package Body Material: GLASS

Glass package provides good insulation and protection for the diode, ensuring durability and stable performance in different environmental conditions.

Config: SINGLE

Single config allows for easy installation and better compatibility with other components in the circuit.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates fast and precise capacitance changes, which is beneficial for frequency tuning and signal modulation applications.

Maximum Reverse Current: 0.02 uA

Low reverse current minimizes power loss and ensures efficient operation of the diode.

Package Shape: ROUND

Round shape facilitates easy mounting and handling of the diode, making it user-friendly for assembly and maintenance.

Reverse Test Voltage: 25 V

High reverse test voltage capability provides robust protection against reverse voltage breakdown, ensuring the longevity of the diode.

No. of Terminals: 2

Having 2 terminals simplifies connection and integration of the diode into the circuit design.

Package Style (Meter): LONG FORM

Long form package style offers versatile mounting options and better heat dissipation, enhancing the overall reliability of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows the diode to be used in a wide range of temperature environments without compromising performance.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable operation even in cold conditions without risking damage to the diode.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability, making it easy to interface the diode with other components.

Terminal Position: AXIAL

Axial terminal position simplifies PCB layout and allows for easy insertion of the diode into the circuit board.

Case Connection: ISOLATED

Isolated case connection ensures electrical safety and minimizes interference, making the diode suitable for high-frequency applications.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows the diode to handle higher power levels without overheating, ensuring stable performance in demanding applications.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value provides a good balance between tuning range and frequency stability, making the diode versatile for different tuning applications.

Minimum Breakdown Voltage: 30 V

High breakdown voltage ensures reliable operation and protection against voltage spikes, making the diode suitable for high-performance circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers adjustable capacitance for frequency tuning and signal modulation, providing flexibility in circuit design.

Terminal Form: WIRE

Wire terminal form facilitates easy connection and soldering, ensuring robust electrical connections for the diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

High repetitive peak reverse voltage capability ensures reliable performance and protection against reverse voltage spikes in the circuit.

Diode Cap Tolerance: 20 %

Capacitance tolerance allows for precise tuning and modulation, ensuring accurate frequency control in the circuit.

Diode Element Material: SILICON

Silicon material offers high reliability and stability, making the diode suitable for long-term use in various electronic devices.

Minimum Diode Capacitance Ratio: 2.6

High minimum capacitance ratio enables a wide tuning range and precise frequency control, making this diode ideal for frequency modulation applications.

Technical Specifications

Varactor Diodes 1N5445 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5445 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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