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BB804-4

NXP Semiconductors

BB804-4 by NXP Semiconductors

BB804-4 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA, operates up to 100 °C, and comes in a compact surface mount package. Ideal for tuning circuits and RF applications, it ensures efficient performance with its dual-element configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,722 parts In-Stock

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Anansix

USA . 2,585 parts In-Stock

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Vyrian

USA . 129 parts In-Stock

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Native Components

USA . 388 parts In-Stock

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$0.740

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388

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Northwest PG Solutions

USA . 2,039 parts In-Stock

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$0.814

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One Stop Electronics

USA . 899 parts In-Stock

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$3.010

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UNI Independent Distributors

Spain . 5,687 parts In-Stock

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Corphita

USA . 3,277 parts In-Stock

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Overview

Elevate your designs with the BB804-4 varactor diode from NXP Semiconductors, a leader in innovative technology. Crafted for superior performance in very high-frequency applications, this compact surface-mount component ensures reliability and exceptional quality. With minimal reverse current and a wide capacitance range, it offers unmatched versatility for RF tuning and signal modulation. Experience enhanced efficiency and seamless integration—choose BB804-4 for cutting-edge solutions that drive your projects forward!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent protection against environmental factors, enhancing the durability and reliability of the varactor diode in various applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements allows for easier integration into circuits, making it suitable for various RF applications.

Frequency Band: VERY HIGH FREQUENCY

This product's capability to operate in the very high frequency range makes it ideal for applications such as oscillators, amplifiers, and RF tuning circuits.

Surface Mount: YES

Being a surface mount component allows for more compact designs and efficient automated assembly processes, saving space on PCBs.

Maximum Reverse Current: 0.02 uA

The low maximum reverse current indicates minimal leakage, thereby improving overall circuit performance and efficiency.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier placement on the PCB and optimizes the use of available space.

Reverse Test Voltage: 16 V

With a reverse test voltage of 16 V, this diode can operate reliably under a variety of conditions while maintaining performance integrity.

No. of Terminals: 3

Having three terminals provides flexibility in circuit design and simplifies connections, especially for dual-element applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style helps in reducing the overall footprint of the device, making it suitable for high-density applications.

Maximum Operating Temperature: 100 °C

A maximum operating temperature of 100 °C ensures reliable operation in high-temperature environments, increasing the diode's applicability.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting positions, which can enhance design flexibility.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is specifically designed for tuning and frequency modulation, making it an essential component in RF circuits.

Terminal Form: GULL WING

Gull wing terminals provide excellent solder joints and mechanical stabilities, enhancing reliability during assembly and in-service.

No. of Elements: 2

Having two elements can allow for more complex circuit functions such as voltage control in tuning applications, providing increased versatility.

Diode Element Material: SILICON

Silicon as the diode element material ensures good performance characteristics and stability in various operating conditions.

Minimum Diode Capacitance Ratio: 1.65

A minimum diode capacitance ratio of 1.65 offers a good range of capacitance variation, making it suitable for precise tuning applications.

Technical Specifications

Varactor Diodes BB804-4 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

1.65

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

16 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB804-4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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